Dependency of threshold switching on density of localized states of Ge 2Sb2Te5 thin films for phase change random access memory

Seung Wook Ryu; Jong Ho Lee; Yong Bae Ahn; Choon Hwan Kim; Byung Joon Choi; Cheol Seong Hwang; Hyeong Joon Kim

doi:10.1063/1.3012366

Dependency of threshold switching on density of localized states of Ge ²Sb²Te⁵ thin films for phase change random access memory

Seung Wook Ryu, Jong Ho Lee, Yong Bae Ahn, Choon Hwan Kim, Byung Joon Choi, Cheol Seong Hwang, Hyeong Joon Kim

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The threshold switching of Ge²Sb²Te⁵ (GST) films for phase change random access memory applications was investigated by measuring the variation in the threshold voltage (V_T) with the crystallinity of the GST films and photon energy absorption spectra. As the GST film was amorphized, V_T increased to approximately 1 V and its electrical resistance increased. The optical band gap and Urbach edge of the GST increased from 0.66 to 0.97 eV and from 12 to 65 meV, respectively, upon its amorphization. It was experimentally confirmed that the threshold switching is associated with the density of localized states of the GST.

Original language	English
Article number	172114
Journal	Applied Physics Letters
Volume	93
Issue number	17
DOIs	https://doi.org/10.1063/1.3012366
State	Published - 2008

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title = "Dependency of threshold switching on density of localized states of Ge 2Sb2Te5 thin films for phase change random access memory",

abstract = "The threshold switching of Ge2Sb2Te5 (GST) films for phase change random access memory applications was investigated by measuring the variation in the threshold voltage (VT) with the crystallinity of the GST films and photon energy absorption spectra. As the GST film was amorphized, VT increased to approximately 1 V and its electrical resistance increased. The optical band gap and Urbach edge of the GST increased from 0.66 to 0.97 eV and from 12 to 65 meV, respectively, upon its amorphization. It was experimentally confirmed that the threshold switching is associated with the density of localized states of the GST.",

author = "Ryu, \{Seung Wook\} and Lee, \{Jong Ho\} and Ahn, \{Yong Bae\} and Kim, \{Choon Hwan\} and Choi, \{Byung Joon\} and Hwang, \{Cheol Seong\} and Kim, \{Hyeong Joon\}",

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doi = "10.1063/1.3012366",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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T1 - Dependency of threshold switching on density of localized states of Ge 2Sb2Te5 thin films for phase change random access memory

AU - Ryu, Seung Wook

AU - Lee, Jong Ho

AU - Ahn, Yong Bae

AU - Kim, Choon Hwan

AU - Choi, Byung Joon

AU - Hwang, Cheol Seong

AU - Kim, Hyeong Joon

PY - 2008

Y1 - 2008

N2 - The threshold switching of Ge2Sb2Te5 (GST) films for phase change random access memory applications was investigated by measuring the variation in the threshold voltage (VT) with the crystallinity of the GST films and photon energy absorption spectra. As the GST film was amorphized, VT increased to approximately 1 V and its electrical resistance increased. The optical band gap and Urbach edge of the GST increased from 0.66 to 0.97 eV and from 12 to 65 meV, respectively, upon its amorphization. It was experimentally confirmed that the threshold switching is associated with the density of localized states of the GST.

AB - The threshold switching of Ge2Sb2Te5 (GST) films for phase change random access memory applications was investigated by measuring the variation in the threshold voltage (VT) with the crystallinity of the GST films and photon energy absorption spectra. As the GST film was amorphized, VT increased to approximately 1 V and its electrical resistance increased. The optical band gap and Urbach edge of the GST increased from 0.66 to 0.97 eV and from 12 to 65 meV, respectively, upon its amorphization. It was experimentally confirmed that the threshold switching is associated with the density of localized states of the GST.

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DO - 10.1063/1.3012366

M3 - Article

AN - SCOPUS:55149123583

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172114

ER -

Dependency of threshold switching on density of localized states of Ge ²Sb²Te⁵ thin films for phase change random access memory

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