TY - GEN
T1 - Development of process for wafer scale encapsulation of devices with very wide trenches
AU - Ayanoor-Vitikkate, Vipin
AU - Chen, Kuan Lin
AU - Park, Woo Tae
AU - Kenny, Thomas W.
PY - 2006
Y1 - 2006
N2 - A Wafer scale encapsulation process has been developed for devices that require wide gaps. In this experiment, we focus on devices that have gaps or trenches 10-20μm wide. This process can also be applied to larger gaps of the order of 50- 100μm. The chief focus of the process development is to achieve a wafer scale encapsulation technique, which can avoid deposition of very thick LPVCD oxide. Once the processing and encapsulation is carried out, SEM images are taken to ensure that the device is completely released and no sacrificial material is left behind.
AB - A Wafer scale encapsulation process has been developed for devices that require wide gaps. In this experiment, we focus on devices that have gaps or trenches 10-20μm wide. This process can also be applied to larger gaps of the order of 50- 100μm. The chief focus of the process development is to achieve a wafer scale encapsulation technique, which can avoid deposition of very thick LPVCD oxide. Once the processing and encapsulation is carried out, SEM images are taken to ensure that the device is completely released and no sacrificial material is left behind.
UR - https://www.scopus.com/pages/publications/85196495926
U2 - 10.1115/IMECE2006-14549
DO - 10.1115/IMECE2006-14549
M3 - Conference contribution
AN - SCOPUS:85196495926
SN - 0791837904
SN - 9780791837900
T3 - American Society of Mechanical Engineers, Micro-Electro Mechanical Systems Division, (Publications) MEMS
BT - Proceedings of 2006 ASME International Mechanical Engineering Congress and Exposition, IMECE2006 - Microelectromechanical Systems
PB - American Society of Mechanical Engineers (ASME)
T2 - 2006 ASME International Mechanical Engineering Congress and Exposition, IMECE2006
Y2 - 5 November 2006 through 10 November 2006
ER -