Devices and circuits in CMOS for THz applications

Z. Ahmad; W. Choi; N. Sharma; J. Zhang; Q. Zhong; D. Y. Kim; Z. Chen; Y. Zhang; R. Han; D. Shim; S. Sankaran; E. Y. Seok; C. Cao; C. Mao; R. M. Schueler; I. R. Medvedev; D. J. Lary; H. J. Nam; P. Raskin; F. C. Delucia; J. P. McMillan; C. F. Neese; I. Kim; I. Momson; P. Yellswarapu; S. Dong; B. K. Kim

doi:10.1109/IEDM.2016.7838509

Devices and circuits in CMOS for THz applications

Z. Ahmad, W. Choi, N. Sharma, J. Zhang, Q. Zhong, D. Y. Kim, Z. Chen, Y. Zhang, R. Han, D. Shim, S. Sankaran, E. Y. Seok, C. Cao, C. Mao, R. M. Schueler, I. R. Medvedev, D. J. Lary, H. J. Nam, P. Raskin, F. C. DeluciaJ. P. McMillan, C. F. Neese, I. Kim, I. Momson, P. Yellswarapu, S. Dong, B. K. Kim

Dept. of Manufacturing Systems and Design Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	29.8.1-29.8.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838509
State	Published - 31 Jan 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

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10.1109/IEDM.2016.7838509

Cite this

Ahmad, Z., Choi, W., Sharma, N., Zhang, J., Zhong, Q., Kim, D. Y., Chen, Z., Zhang, Y., Han, R., Shim, D., Sankaran, S., Seok, E. Y., Cao, C., Mao, C., Schueler, R. M., Medvedev, I. R., Lary, D. J., Nam, H. J., Raskin, P., ... Kim, B. K. (2017). Devices and circuits in CMOS for THz applications. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 29.8.1-29.8.4). Article 7838509 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838509

@inproceedings{202ecf2f6f01433f88b1eeb5753ca044,

title = "Devices and circuits in CMOS for THz applications",

abstract = "Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.",

author = "Z. Ahmad and W. Choi and N. Sharma and J. Zhang and Q. Zhong and Kim, {D. Y.} and Z. Chen and Y. Zhang and R. Han and D. Shim and S. Sankaran and Seok, {E. Y.} and C. Cao and C. Mao and Schueler, {R. M.} and Medvedev, {I. R.} and Lary, {D. J.} and Nam, {H. J.} and P. Raskin and Delucia, {F. C.} and McMillan, {J. P.} and Neese, {C. F.} and I. Kim and I. Momson and P. Yellswarapu and S. Dong and Kim, {B. K.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838509",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "29.8.1--29.8.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

}

Ahmad, Z, Choi, W, Sharma, N, Zhang, J, Zhong, Q, Kim, DY, Chen, Z, Zhang, Y, Han, R, Shim, D, Sankaran, S, Seok, EY, Cao, C, Mao, C, Schueler, RM, Medvedev, IR, Lary, DJ, Nam, HJ, Raskin, P, Delucia, FC, McMillan, JP, Neese, CF, Kim, I, Momson, I, Yellswarapu, P, Dong, S & Kim, BK 2017, Devices and circuits in CMOS for THz applications. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838509, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 29.8.1-29.8.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838509

Devices and circuits in CMOS for THz applications. / Ahmad, Z.; Choi, W.; Sharma, N. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 29.8.1-29.8.4 7838509 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Devices and circuits in CMOS for THz applications

AU - Ahmad, Z.

AU - Choi, W.

AU - Sharma, N.

AU - Zhang, J.

AU - Zhong, Q.

AU - Kim, D. Y.

AU - Chen, Z.

AU - Zhang, Y.

AU - Han, R.

AU - Shim, D.

AU - Sankaran, S.

AU - Seok, E. Y.

AU - Cao, C.

AU - Mao, C.

AU - Schueler, R. M.

AU - Medvedev, I. R.

AU - Lary, D. J.

AU - Nam, H. J.

AU - Raskin, P.

AU - Delucia, F. C.

AU - McMillan, J. P.

AU - Neese, C. F.

AU - Kim, I.

AU - Momson, I.

AU - Yellswarapu, P.

AU - Dong, S.

AU - Kim, B. K.

PY - 2017/1/31

Y1 - 2017/1/31

N2 - Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.

AB - Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.

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U2 - 10.1109/IEDM.2016.7838509

DO - 10.1109/IEDM.2016.7838509

M3 - Conference contribution

AN - SCOPUS:85014445911

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 29.8.1-29.8.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

Y2 - 3 December 2016 through 7 December 2016

ER -

Devices and circuits in CMOS for THz applications

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