Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules

Seong Keim Kim; Sang Woon Lee; Minha Seo; Jeong Hwan Han; Sang Young Lee; Cheol Seong Hwang

doi:10.1149/1.2728794

Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules

Seong Keim Kim
, Sang Woon Lee
, Minha Seo
, Jeong Hwan Han
, Sang Young Lee
, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

TiO₂ thm films with high dielectric constants (83 - 100) were grown on sputtered and atomic-layer-deposited (ALD) Ru electrode at a growth temperature of 250°C using the atomic-layer-deposition method. The as-deposited films were crystallized with rutile structure. Further improvements in the leakage current characteristics are achieved by proper doping of Al and Hf, thereby an equivalent oxide thickness (t_ox) ∼ 0.6 nm with small enough leakage current density (1 × 10^-7 A/cm² at 0.8V) was achieved. These good properties are also realized from 3D structured hole-type capacitors. The rutile structured TiO₂ films were also obtained from Ru electrode which is deposited by an ALD process using a newly developed noble precursor. In addition, it was confirmed that the Ru metal film step coverage on the capacitor hole structure with an aspect ratio of 17 is > 90%. The thermal stability of the Ru electrode on severe 3D holes was improved with the adoption of hydrogen plasma process.

Original language	English
Title of host publication	ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics
Publisher	Electrochemical Society Inc.
Pages	137-150
Number of pages	14
Edition	3
ISBN (Electronic)	9781566775526
ISBN (Print)	9781566775526
DOIs	https://doi.org/10.1149/1.2728794
State	Published - 2007
Event	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting - Chicago, IL, United States Duration: 6 May 2007 → 11 May 2007

Publication series

Name	ECS Transactions
Number	3
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	6/05/07 → 11/05/07

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1149/1.2728794

Cite this

Kim, S. K., Lee, S. W., Seo, M., Han, J. H., Lee, S. Y., & Hwang, C. S. (2007). Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules. In ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (3 ed., pp. 137-150). (ECS Transactions; Vol. 6, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.2728794

@inproceedings{2bbec2701a884ee58446a14bcf20d519,

title = "Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules",

abstract = "TiO2 thm films with high dielectric constants (83 - 100) were grown on sputtered and atomic-layer-deposited (ALD) Ru electrode at a growth temperature of 250°C using the atomic-layer-deposition method. The as-deposited films were crystallized with rutile structure. Further improvements in the leakage current characteristics are achieved by proper doping of Al and Hf, thereby an equivalent oxide thickness (tox) ∼ 0.6 nm with small enough leakage current density (1 × 10-7 A/cm2 at 0.8V) was achieved. These good properties are also realized from 3D structured hole-type capacitors. The rutile structured TiO2 films were also obtained from Ru electrode which is deposited by an ALD process using a newly developed noble precursor. In addition, it was confirmed that the Ru metal film step coverage on the capacitor hole structure with an aspect ratio of 17 is > 90\%. The thermal stability of the Ru electrode on severe 3D holes was improved with the adoption of hydrogen plasma process.",

author = "Kim, \{Seong Keim\} and Lee, \{Sang Woon\} and Minha Seo and Han, \{Jeong Hwan\} and Lee, \{Sang Young\} and Hwang, \{Cheol Seong\}",

year = "2007",

doi = "10.1149/1.2728794",

language = "English",

isbn = "9781566775526",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "137--150",

booktitle = "ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics",

edition = "3",

note = "Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting ; Conference date: 06-05-2007 Through 11-05-2007",

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Kim, SK, Lee, SW, Seo, M, Han, JH, Lee, SY & Hwang, CS 2007, Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules. in ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3 edn, ECS Transactions, no. 3, vol. 6, Electrochemical Society Inc., pp. 137-150, Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting, Chicago, IL, United States, 6/05/07. https://doi.org/10.1149/1.2728794

Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules. / Kim, Seong Keim; Lee, Sang Woon; Seo, Minha et al.
ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3. ed. Electrochemical Society Inc., 2007. p. 137-150 (ECS Transactions; Vol. 6, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules

AU - Kim, Seong Keim

AU - Lee, Sang Woon

AU - Seo, Minha

AU - Han, Jeong Hwan

AU - Lee, Sang Young

AU - Hwang, Cheol Seong

PY - 2007

Y1 - 2007

N2 - TiO2 thm films with high dielectric constants (83 - 100) were grown on sputtered and atomic-layer-deposited (ALD) Ru electrode at a growth temperature of 250°C using the atomic-layer-deposition method. The as-deposited films were crystallized with rutile structure. Further improvements in the leakage current characteristics are achieved by proper doping of Al and Hf, thereby an equivalent oxide thickness (tox) ∼ 0.6 nm with small enough leakage current density (1 × 10-7 A/cm2 at 0.8V) was achieved. These good properties are also realized from 3D structured hole-type capacitors. The rutile structured TiO2 films were also obtained from Ru electrode which is deposited by an ALD process using a newly developed noble precursor. In addition, it was confirmed that the Ru metal film step coverage on the capacitor hole structure with an aspect ratio of 17 is > 90%. The thermal stability of the Ru electrode on severe 3D holes was improved with the adoption of hydrogen plasma process.

AB - TiO2 thm films with high dielectric constants (83 - 100) were grown on sputtered and atomic-layer-deposited (ALD) Ru electrode at a growth temperature of 250°C using the atomic-layer-deposition method. The as-deposited films were crystallized with rutile structure. Further improvements in the leakage current characteristics are achieved by proper doping of Al and Hf, thereby an equivalent oxide thickness (tox) ∼ 0.6 nm with small enough leakage current density (1 × 10-7 A/cm2 at 0.8V) was achieved. These good properties are also realized from 3D structured hole-type capacitors. The rutile structured TiO2 films were also obtained from Ru electrode which is deposited by an ALD process using a newly developed noble precursor. In addition, it was confirmed that the Ru metal film step coverage on the capacitor hole structure with an aspect ratio of 17 is > 90%. The thermal stability of the Ru electrode on severe 3D holes was improved with the adoption of hydrogen plasma process.

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U2 - 10.1149/1.2728794

DO - 10.1149/1.2728794

M3 - Conference contribution

AN - SCOPUS:45849124994

SN - 9781566775526

T3 - ECS Transactions

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EP - 150

BT - ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics

PB - Electrochemical Society Inc.

T2 - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting

Y2 - 6 May 2007 through 11 May 2007

ER -

Kim SK, Lee SW, Seo M, Han JH, Lee SY, Hwang CS. Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules. In ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3 ed. Electrochemical Society Inc. 2007. p. 137-150. (ECS Transactions; 3). doi: 10.1149/1.2728794

Dielectric and electrode thin films for stack-cell structured DRAM capacitors with sub 50-nm design rules

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