Dielectric glue wafer bonding for 3D ICs

Y. Kwon; A. Jindal; J. J. McMahon; J. Q. Lu; R. J. Gutmann; T. S. Cale

doi:10.1557/proc-766-e5.8

Dielectric glue wafer bonding for 3D ICs

Y. Kwon, A. Jindal, J. J. McMahon, J. Q. Lu, R. J. Gutmann, T. S. Cale

Dept. of Chemical and Biomolecular Engineering

Rensselaer Polytechnic Institute

Research output: Contribution to journal › Conference article › peer-review

23 Scopus citations

Abstract

A process to bond 200 mm wafers for wafer-level three-dimensional integrated circuit (3D-IC) applications is discussed. Four-point bending is used to quantify the bonding strength and identify the weak interface. Using benzocylcobutene (BCB) glue, the bonding strength depends on (1) glue thickness, (2) glue film preparation, and (3) materials and structures on the wafer(s). A seamless BCB-to-BCB bond interface provides the highest bonding strength compared to other interfaces in these structures (> 34 J/m²). Mechanical and electrical properties of a wafer with copper interconnect structures are preserved after wafer bonding and wafer thinning, confirming the potential of the bonding process for 3D ICs.

Original language	English
Pages (from-to)	27-32
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	766
DOIs	https://doi.org/10.1557/proc-766-e5.8
State	Published - 2003
Event	Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States Duration: 21 Apr 2003 → 25 Apr 2003

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title = "Dielectric glue wafer bonding for 3D ICs",

abstract = "A process to bond 200 mm wafers for wafer-level three-dimensional integrated circuit (3D-IC) applications is discussed. Four-point bending is used to quantify the bonding strength and identify the weak interface. Using benzocylcobutene (BCB) glue, the bonding strength depends on (1) glue thickness, (2) glue film preparation, and (3) materials and structures on the wafer(s). A seamless BCB-to-BCB bond interface provides the highest bonding strength compared to other interfaces in these structures (> 34 J/m2). Mechanical and electrical properties of a wafer with copper interconnect structures are preserved after wafer bonding and wafer thinning, confirming the potential of the bonding process for 3D ICs.",

author = "Y. Kwon and A. Jindal and McMahon, {J. J.} and Lu, {J. Q.} and Gutmann, {R. J.} and Cale, {T. S.}",

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doi = "10.1557/proc-766-e5.8",

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TY - JOUR

T1 - Dielectric glue wafer bonding for 3D ICs

AU - Kwon, Y.

AU - Jindal, A.

AU - McMahon, J. J.

AU - Lu, J. Q.

AU - Gutmann, R. J.

AU - Cale, T. S.

PY - 2003

Y1 - 2003

N2 - A process to bond 200 mm wafers for wafer-level three-dimensional integrated circuit (3D-IC) applications is discussed. Four-point bending is used to quantify the bonding strength and identify the weak interface. Using benzocylcobutene (BCB) glue, the bonding strength depends on (1) glue thickness, (2) glue film preparation, and (3) materials and structures on the wafer(s). A seamless BCB-to-BCB bond interface provides the highest bonding strength compared to other interfaces in these structures (> 34 J/m2). Mechanical and electrical properties of a wafer with copper interconnect structures are preserved after wafer bonding and wafer thinning, confirming the potential of the bonding process for 3D ICs.

AB - A process to bond 200 mm wafers for wafer-level three-dimensional integrated circuit (3D-IC) applications is discussed. Four-point bending is used to quantify the bonding strength and identify the weak interface. Using benzocylcobutene (BCB) glue, the bonding strength depends on (1) glue thickness, (2) glue film preparation, and (3) materials and structures on the wafer(s). A seamless BCB-to-BCB bond interface provides the highest bonding strength compared to other interfaces in these structures (> 34 J/m2). Mechanical and electrical properties of a wafer with copper interconnect structures are preserved after wafer bonding and wafer thinning, confirming the potential of the bonding process for 3D ICs.

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U2 - 10.1557/proc-766-e5.8

DO - 10.1557/proc-766-e5.8

M3 - Conference article

AN - SCOPUS:0348199188

SN - 0272-9172

VL - 766

SP - 27

EP - 32

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003

Y2 - 21 April 2003 through 25 April 2003

ER -

Dielectric glue wafer bonding for 3D ICs

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