TY - GEN
T1 - Diodes in CMOS for millimeter and sub-millimeter wave circuits
AU - Mao, C.
AU - Shim, D.
AU - Han, R.
AU - Sankaran, S.
AU - Seok, E.
AU - Zhang, Y.
AU - O, K. K.
PY - 2010
Y1 - 2010
N2 - High volume millimeter wave applications are emerging. With the speed improvement of CMOS, sub-millimeter wave operation of CMOS circuits appears to be possible. in traditional millimeter and sub-millimeter wave systems, discrete Schottky diodes are widely utilized. This paper reviews the high frequency performance of junction and Schottky diodes fabricated in CMOS without any process modification, and circuits using the diodes, as well as suggesting approaches that can improve their performance.
AB - High volume millimeter wave applications are emerging. With the speed improvement of CMOS, sub-millimeter wave operation of CMOS circuits appears to be possible. in traditional millimeter and sub-millimeter wave systems, discrete Schottky diodes are widely utilized. This paper reviews the high frequency performance of junction and Schottky diodes fabricated in CMOS without any process modification, and circuits using the diodes, as well as suggesting approaches that can improve their performance.
UR - https://www.scopus.com/pages/publications/77957904250
U2 - 10.1109/VTSA.2010.5488966
DO - 10.1109/VTSA.2010.5488966
M3 - Conference contribution
AN - SCOPUS:77957904250
SN - 9781424450633
T3 - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
SP - 23
EP - 24
BT - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
T2 - 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Y2 - 26 April 2010 through 28 April 2010
ER -