Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices

Eun Bee Ko; Junho Sung; Seon Yeon Choi; Yasir Hassan; Jeong Ju Bae; Jongseok Kim; Hyun You Kim; Eunho Lee; Min Sup Choi; Hyun Ho Kim

doi:10.1007/s40820-026-02078-y

Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices

Eun Bee Ko
, Junho Sung
, Seon Yeon Choi
, Yasir Hassan
, Jeong Ju Bae
, Jongseok Kim
, Hyun You Kim
, Eunho Lee
, Min Sup Choi
, Hyun Ho Kim

Dept. of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Janus MoSSe-based floating-gate memory exhibits ultrafast charge-trapping dynamics and stable charge retention exceeding 10⁸ s under low-voltage operation. The intrinsic out-of-plane dipole moment in Janus MoSSe effectively suppresses leakage current and enlarges the memory window, even with ultrathin h-BN tunneling layers. The proposed all-van der Waals heterostructure provides a scalable platform for high-speed, energy-efficient, and reliable nonvolatile memory applications.

Original language	English
Article number	216
Journal	Nano-Micro Letters
Volume	18
Issue number	1
DOIs	https://doi.org/10.1007/s40820-026-02078-y
State	Published - Dec 2026

Keywords

2D materials
Floating-gate
Janus TMDs
Nonvolatile memory
Synaptic device

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10.1007/s40820-026-02078-y

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title = "Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices",

abstract = "Janus MoSSe-based floating-gate memory exhibits ultrafast charge-trapping dynamics and stable charge retention exceeding 108 s under low-voltage operation. The intrinsic out-of-plane dipole moment in Janus MoSSe effectively suppresses leakage current and enlarges the memory window, even with ultrathin h-BN tunneling layers. The proposed all-van der Waals heterostructure provides a scalable platform for high-speed, energy-efficient, and reliable nonvolatile memory applications.",

keywords = "2D materials, Floating-gate, Janus TMDs, Nonvolatile memory, Synaptic device",

author = "Ko, \{Eun Bee\} and Junho Sung and Choi, \{Seon Yeon\} and Yasir Hassan and Bae, \{Jeong Ju\} and Jongseok Kim and Kim, \{Hyun You\} and Eunho Lee and Choi, \{Min Sup\} and Kim, \{Hyun Ho\}",

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month = dec,

doi = "10.1007/s40820-026-02078-y",

language = "English",

volume = "18",

journal = "Nano-Micro Letters",

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T1 - Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices

AU - Ko, Eun Bee

AU - Sung, Junho

AU - Choi, Seon Yeon

AU - Hassan, Yasir

AU - Bae, Jeong Ju

AU - Kim, Jongseok

AU - Kim, Hyun You

AU - Lee, Eunho

AU - Choi, Min Sup

AU - Kim, Hyun Ho

N1 - Publisher Copyright: © The Author(s) 2026.

PY - 2026/12

Y1 - 2026/12

N2 - Janus MoSSe-based floating-gate memory exhibits ultrafast charge-trapping dynamics and stable charge retention exceeding 108 s under low-voltage operation. The intrinsic out-of-plane dipole moment in Janus MoSSe effectively suppresses leakage current and enlarges the memory window, even with ultrathin h-BN tunneling layers. The proposed all-van der Waals heterostructure provides a scalable platform for high-speed, energy-efficient, and reliable nonvolatile memory applications.

AB - Janus MoSSe-based floating-gate memory exhibits ultrafast charge-trapping dynamics and stable charge retention exceeding 108 s under low-voltage operation. The intrinsic out-of-plane dipole moment in Janus MoSSe effectively suppresses leakage current and enlarges the memory window, even with ultrathin h-BN tunneling layers. The proposed all-van der Waals heterostructure provides a scalable platform for high-speed, energy-efficient, and reliable nonvolatile memory applications.

KW - 2D materials

KW - Floating-gate

KW - Janus TMDs

KW - Nonvolatile memory

KW - Synaptic device

UR - https://www.scopus.com/pages/publications/105028657728

U2 - 10.1007/s40820-026-02078-y

DO - 10.1007/s40820-026-02078-y

M3 - Article

AN - SCOPUS:105028657728

SN - 2311-6706

VL - 18

JO - Nano-Micro Letters

JF - Nano-Micro Letters

IS - 1

M1 - 216

ER -

Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices

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Keywords

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