Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN

Hogyoung Kim; Keun Man Song

doi:10.1007/s42341-018-0015-y

Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN

Hogyoung Kim, Keun Man Song

Dept. of Optometry

Korea Advanced Nano Fab Center

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We investigated the electrical properties of Au/AlGaN/GaN Schottky junctions as a function of temperature by analyzing the current–voltage (I–V) measurements. The barrier height increased with increasing temperature, but the ideality factor decreased. Increases in temperature are associated with barrier inhomogeneity. The modified Richardson plots for Al_0.25Ga_0.75N yielded a higher Richardson constant, 77.3 A cm⁻²K⁻², than theoretically predicted (30.0 A cm⁻² K⁻²). This indicates that the thermionic emission (TE) model with barrier inhomogeneity is not suitable for explaining the transport characteristics of the junction. We fitted the experimental I–V data to predictions based on various transport mechanisms, such as TE, generation-recombination, and tunneling currents. The dominant transport mechanism at all temperatures was found to be caused by the tunneling current. The dislocation model of the tunneling current yielded a dislocation density of 2.96 × 10⁶ cm⁻².

Original language	English
Pages (from-to)	101-105
Number of pages	5
Journal	Transactions on Electrical and Electronic Materials
Volume	19
Issue number	2
DOIs	https://doi.org/10.1007/s42341-018-0015-y
State	Published - 1 Apr 2018

Keywords

AlGaN/GaN
Dislocation density
Tunneling current

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10.1007/s42341-018-0015-y

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title = "Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN",

abstract = "We investigated the electrical properties of Au/AlGaN/GaN Schottky junctions as a function of temperature by analyzing the current–voltage (I–V) measurements. The barrier height increased with increasing temperature, but the ideality factor decreased. Increases in temperature are associated with barrier inhomogeneity. The modified Richardson plots for Al0.25Ga0.75N yielded a higher Richardson constant, 77.3 A cm−2K−2, than theoretically predicted (30.0 A cm−2 K−2). This indicates that the thermionic emission (TE) model with barrier inhomogeneity is not suitable for explaining the transport characteristics of the junction. We fitted the experimental I–V data to predictions based on various transport mechanisms, such as TE, generation-recombination, and tunneling currents. The dominant transport mechanism at all temperatures was found to be caused by the tunneling current. The dislocation model of the tunneling current yielded a dislocation density of 2.96 × 106 cm−2.",

keywords = "AlGaN/GaN, Dislocation density, Tunneling current",

author = "Hogyoung Kim and Song, \{Keun Man\}",

note = "Publisher Copyright: {\textcopyright} 2018, The Korean Institute of Electrical and Electronic Material Engineers.",

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T1 - Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN

AU - Kim, Hogyoung

AU - Song, Keun Man

PY - 2018/4/1

Y1 - 2018/4/1

N2 - We investigated the electrical properties of Au/AlGaN/GaN Schottky junctions as a function of temperature by analyzing the current–voltage (I–V) measurements. The barrier height increased with increasing temperature, but the ideality factor decreased. Increases in temperature are associated with barrier inhomogeneity. The modified Richardson plots for Al0.25Ga0.75N yielded a higher Richardson constant, 77.3 A cm−2K−2, than theoretically predicted (30.0 A cm−2 K−2). This indicates that the thermionic emission (TE) model with barrier inhomogeneity is not suitable for explaining the transport characteristics of the junction. We fitted the experimental I–V data to predictions based on various transport mechanisms, such as TE, generation-recombination, and tunneling currents. The dominant transport mechanism at all temperatures was found to be caused by the tunneling current. The dislocation model of the tunneling current yielded a dislocation density of 2.96 × 106 cm−2.

AB - We investigated the electrical properties of Au/AlGaN/GaN Schottky junctions as a function of temperature by analyzing the current–voltage (I–V) measurements. The barrier height increased with increasing temperature, but the ideality factor decreased. Increases in temperature are associated with barrier inhomogeneity. The modified Richardson plots for Al0.25Ga0.75N yielded a higher Richardson constant, 77.3 A cm−2K−2, than theoretically predicted (30.0 A cm−2 K−2). This indicates that the thermionic emission (TE) model with barrier inhomogeneity is not suitable for explaining the transport characteristics of the junction. We fitted the experimental I–V data to predictions based on various transport mechanisms, such as TE, generation-recombination, and tunneling currents. The dominant transport mechanism at all temperatures was found to be caused by the tunneling current. The dislocation model of the tunneling current yielded a dislocation density of 2.96 × 106 cm−2.

KW - AlGaN/GaN

KW - Dislocation density

KW - Tunneling current

UR - https://www.scopus.com/pages/publications/85045636409

U2 - 10.1007/s42341-018-0015-y

DO - 10.1007/s42341-018-0015-y

M3 - Article

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SN - 1229-7607

VL - 19

SP - 101

EP - 105

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 2

ER -

Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN

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Keywords

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