TY - GEN
T1 - Dissecting and Re-Architecting 3D NAND Flash PIM Arrays for Efficient Single-Batch Token Generation in LLMS
AU - Jang, Yongjoo
AU - Hwang, Sangwoo
AU - Lee, Hojin
AU - Jung, Sangwoo
AU - Lee, Donghun
AU - Shim, Wonbo
AU - Kung, Jaeha
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - The advancement of large language models has led to models with billions of parameters, significantly increasing memory and compute demands. Serving such models on conventional hardware is challenging due to limited DRAM capacity and high GPU costs. Thus, in this work, we propose offloading the single-batch token generation to a 3D NAND flash processingin-memory (PIM) device, leveraging its high storage density to overcome the DRAM capacity wall. We explore 3D NAND flash configurations and present a re-architected PIM array with an H-tree network for optimal latency and cell density. Along with the well-chosen PIM array size, we develop operation tiling and mapping methods for LLM layers, achieving a 2.4 speedup over four RTX4090 with vLLM and comparable performance to four A100 with only 4.9% latency overhead. Our detailed area analysis reveals that the proposed 3D NAND flash PIM architecture can be integrated within a 4.98mm2 die area under the memory array, without extra area overhead.
AB - The advancement of large language models has led to models with billions of parameters, significantly increasing memory and compute demands. Serving such models on conventional hardware is challenging due to limited DRAM capacity and high GPU costs. Thus, in this work, we propose offloading the single-batch token generation to a 3D NAND flash processingin-memory (PIM) device, leveraging its high storage density to overcome the DRAM capacity wall. We explore 3D NAND flash configurations and present a re-architected PIM array with an H-tree network for optimal latency and cell density. Along with the well-chosen PIM array size, we develop operation tiling and mapping methods for LLM layers, achieving a 2.4 speedup over four RTX4090 with vLLM and comparable performance to four A100 with only 4.9% latency overhead. Our detailed area analysis reveals that the proposed 3D NAND flash PIM architecture can be integrated within a 4.98mm2 die area under the memory array, without extra area overhead.
KW - 3D NAND Flash
KW - Large Language Models (LLMs)
KW - Processing-in-Memory (PIM)
UR - https://www.scopus.com/pages/publications/105032516497
U2 - 10.1109/ICCD65941.2025.00040
DO - 10.1109/ICCD65941.2025.00040
M3 - Conference contribution
AN - SCOPUS:105032516497
T3 - Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors
SP - 237
EP - 244
BT - Proceedings - 2025 IEEE 43rd International Conference on Computer Design, ICCD 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd International Conference on Computer Design, ICCD 2025
Y2 - 10 November 2025 through 12 November 2025
ER -