Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes

Sang Bum Kang; Chang Ju Lee; Chul Ho Won; Yi Sak Koo; Jung Hee Lee; Sung Ho Hahm; Seul Ki Hong; Byung Jin Cho

doi:10.1109/QiR.2015.7374889

Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes

Sang Bum Kang, Chang Ju Lee, Chul Ho Won, Yi Sak Koo, Jung Hee Lee, Sung Ho Hahm, Seul Ki Hong, Byung Jin Cho

Dept. of Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity.

Original language	English
Title of host publication	14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	30-33
Number of pages	4
ISBN (Electronic)	9781479965519
DOIs	https://doi.org/10.1109/QiR.2015.7374889
State	Published - 7 Jan 2016
Event	14th International Conference on QiR (Quality in Research), QiR 2015 - Lombok, Indonesia Duration: 10 Aug 2015 → 13 Aug 2015

Publication series

Name	14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015

Conference

Conference	14th International Conference on QiR (Quality in Research), QiR 2015
Country/Territory	Indonesia
City	Lombok
Period	10/08/15 → 13/08/15

Keywords

Al2O3
AlGaN
GaN
Graphene
MISIM (Metal-insulator-semiconductor-insulator-metal)
Ni
Schottky
UV sensor

Access to Document

10.1109/QiR.2015.7374889

Cite this

Kang, S. B., Lee, C. J., Won, C. H., Koo, Y. S., Lee, J. H., Hahm, S. H., Hong, S. K., & Cho, B. J. (2016). Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes. In 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015 (pp. 30-33). Article 7374889 (14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/QiR.2015.7374889

Kang, Sang Bum ; Lee, Chang Ju ; Won, Chul Ho et al. / Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes. 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 30-33 (14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015).

@inproceedings{131ce3477b674267850e6e5707fc1c66,

title = "Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes",

abstract = "We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity.",

keywords = "Al2O3, AlGaN, GaN, Graphene, MISIM (Metal-insulator-semiconductor-insulator-metal), Ni, Schottky, UV sensor",

author = "Kang, \{Sang Bum\} and Lee, \{Chang Ju\} and Won, \{Chul Ho\} and Koo, \{Yi Sak\} and Lee, \{Jung Hee\} and Hahm, \{Sung Ho\} and Hong, \{Seul Ki\} and Cho, \{Byung Jin\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 14th International Conference on QiR (Quality in Research), QiR 2015 ; Conference date: 10-08-2015 Through 13-08-2015",

year = "2016",

month = jan,

day = "7",

doi = "10.1109/QiR.2015.7374889",

language = "English",

series = "14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "30--33",

booktitle = "14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015",

}

Kang, SB, Lee, CJ, Won, CH, Koo, YS, Lee, JH, Hahm, SH, Hong, SK & Cho, BJ 2016, Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes. in 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015., 7374889, 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015, Institute of Electrical and Electronics Engineers Inc., pp. 30-33, 14th International Conference on QiR (Quality in Research), QiR 2015, Lombok, Indonesia, 10/08/15. https://doi.org/10.1109/QiR.2015.7374889

Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes. / Kang, Sang Bum; Lee, Chang Ju; Won, Chul Ho et al.
14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 30-33 7374889 (14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes

AU - Kang, Sang Bum

AU - Lee, Chang Ju

AU - Won, Chul Ho

AU - Koo, Yi Sak

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

AU - Hong, Seul Ki

AU - Cho, Byung Jin

PY - 2016/1/7

Y1 - 2016/1/7

N2 - We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity.

AB - We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity.

KW - Al2O3

KW - AlGaN

KW - GaN

KW - Graphene

KW - MISIM (Metal-insulator-semiconductor-insulator-metal)

KW - Ni

KW - Schottky

KW - UV sensor

UR - http://www.scopus.com/inward/record.url?scp=84963865508&partnerID=8YFLogxK

U2 - 10.1109/QiR.2015.7374889

DO - 10.1109/QiR.2015.7374889

M3 - Conference contribution

AN - SCOPUS:84963865508

T3 - 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015

SP - 30

EP - 33

BT - 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th International Conference on QiR (Quality in Research), QiR 2015

Y2 - 10 August 2015 through 13 August 2015

ER -

Kang SB, Lee CJ, Won CH, Koo YS, Lee JH, Hahm SH et al. Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes. In 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 30-33. 7374889. (14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015). doi: 10.1109/QiR.2015.7374889

Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes

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Keywords

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