TY - GEN
T1 - Dramatic improvement of high-k gate dielectric reliability by using mono-layer graphene gate electrode
AU - Park, Jong Kyung
AU - Song, Seung Min
AU - Mun, Jeong Hun
AU - Cho, Byung Jin
PY - 2012
Y1 - 2012
N2 - We demonstrate for the first time that the high-k gate dielectric reliability is dramatically improved by replacing metal gate electrode with graphene gate electrode. The atomic-scale thickness and flexible nature of graphene completely eliminate mechanical stress in the high-k gate dielectric, resulting in significant reduction of trap generation in the high-k film. Almost all the electrical properties related to reliability of MOSFET such as the PBTI, TDDB, leakage current, etc are significantly improved. Data retention and program/erase properties of charge trap Flash memory are also greatly improved.
AB - We demonstrate for the first time that the high-k gate dielectric reliability is dramatically improved by replacing metal gate electrode with graphene gate electrode. The atomic-scale thickness and flexible nature of graphene completely eliminate mechanical stress in the high-k gate dielectric, resulting in significant reduction of trap generation in the high-k film. Almost all the electrical properties related to reliability of MOSFET such as the PBTI, TDDB, leakage current, etc are significantly improved. Data retention and program/erase properties of charge trap Flash memory are also greatly improved.
UR - http://www.scopus.com/inward/record.url?scp=84866559838&partnerID=8YFLogxK
U2 - 10.1109/VLSIT.2012.6242446
DO - 10.1109/VLSIT.2012.6242446
M3 - Conference contribution
AN - SCOPUS:84866559838
SN - 9781467308458
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 31
EP - 32
BT - 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
T2 - 2012 Symposium on VLSI Technology, VLSIT 2012
Y2 - 12 June 2012 through 14 June 2012
ER -