Dynamic threshold switching Behavior of Ge2Sb2Te5and Sb-doped Ge2Sb2Te5thin films using scanning electrical nanoprobe

P. Zhou; Y. C. Shin; B. J. Choi; S. Choi; C. S. Hwang; Y. Y. Lin; H. B. Lv; X. J. Yan; T. A. Tang; L. Y. Chen; B. M. Chen

doi:10.1149/1.2754390

Dynamic threshold switching Behavior of Ge₂Sb₂Te₅and Sb-doped Ge₂Sb₂Te₅thin films using scanning electrical nanoprobe

P. Zhou, Y. C. Shin, B. J. Choi, S. Choi, C. S. Hwang, Y. Y. Lin, H. B. Lv, X. J. Yan, T. A. Tang, L. Y. Chen, B. M. Chen

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The dynamic oscillation in the current-time characteristics of Ge2 Sb2 Te5 and Sb-doped Ge2 Sb2 Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2 Sb2 Te5 and doped Ge2 Sb2 Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2 Sb2 Te5 during postannealing at 300°C. Sb-doping also increased the threshold switching speed.

Original language	English
Pages (from-to)	281-283
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	9
DOIs	https://doi.org/10.1149/1.2754390
State	Published - 1 Jan 2007

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title = "Dynamic threshold switching Behavior of Ge2Sb2Te5and Sb-doped Ge2Sb2Te5thin films using scanning electrical nanoprobe",

abstract = "The dynamic oscillation in the current-time characteristics of Ge2 Sb2 Te5 and Sb-doped Ge2 Sb2 Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2 Sb2 Te5 and doped Ge2 Sb2 Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2 Sb2 Te5 during postannealing at 300°C. Sb-doping also increased the threshold switching speed.",

author = "P. Zhou and Shin, \{Y. C.\} and Choi, \{B. J.\} and S. Choi and Hwang, \{C. S.\} and Lin, \{Y. Y.\} and Lv, \{H. B.\} and Yan, \{X. J.\} and Tang, \{T. A.\} and Chen, \{L. Y.\} and Chen, \{B. M.\}",

year = "2007",

month = jan,

day = "1",

doi = "10.1149/1.2754390",

language = "English",

volume = "10",

pages = "281--283",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Dynamic threshold switching Behavior of Ge2Sb2Te5and Sb-doped Ge2Sb2Te5thin films using scanning electrical nanoprobe

AU - Zhou, P.

AU - Shin, Y. C.

AU - Choi, B. J.

AU - Choi, S.

AU - Hwang, C. S.

AU - Lin, Y. Y.

AU - Lv, H. B.

AU - Yan, X. J.

AU - Tang, T. A.

AU - Chen, L. Y.

AU - Chen, B. M.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - The dynamic oscillation in the current-time characteristics of Ge2 Sb2 Te5 and Sb-doped Ge2 Sb2 Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2 Sb2 Te5 and doped Ge2 Sb2 Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2 Sb2 Te5 during postannealing at 300°C. Sb-doping also increased the threshold switching speed.

AB - The dynamic oscillation in the current-time characteristics of Ge2 Sb2 Te5 and Sb-doped Ge2 Sb2 Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2 Sb2 Te5 and doped Ge2 Sb2 Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2 Sb2 Te5 during postannealing at 300°C. Sb-doping also increased the threshold switching speed.

UR - https://www.scopus.com/pages/publications/34547149985

U2 - 10.1149/1.2754390

DO - 10.1149/1.2754390

M3 - Article

AN - SCOPUS:34547149985

SN - 1099-0062

VL - 10

SP - 281

EP - 283

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 9

ER -

Dynamic threshold switching Behavior of Ge₂Sb₂Te₅and Sb-doped Ge₂Sb₂Te₅thin films using scanning electrical nanoprobe

Abstract

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