Dynamic threshold switching Behavior of Ge2Sb2Te5and Sb-doped Ge2Sb2Te5thin films using scanning electrical nanoprobe

P. Zhou; Y. C. Shin; B. J. Choi; S. Choi; C. S. Hwang; Y. Y. Lin; H. B. Lv; X. J. Yan; T. A. Tang; L. Y. Chen; B. M. Chen

doi:10.1149/1.2754390

Dynamic threshold switching Behavior of Ge₂Sb₂Te₅and Sb-doped Ge₂Sb₂Te₅thin films using scanning electrical nanoprobe

P. Zhou
, Y. C. Shin
, B. J. Choi
, S. Choi
, C. S. Hwang
, Y. Y. Lin
, H. B. Lv
, X. J. Yan
, T. A. Tang
, L. Y. Chen
, B. M. Chen

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The dynamic oscillation in the current-time characteristics of Ge2 Sb2 Te5 and Sb-doped Ge2 Sb2 Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2 Sb2 Te5 and doped Ge2 Sb2 Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2 Sb2 Te5 during postannealing at 300°C. Sb-doping also increased the threshold switching speed.

Original language	English
Pages (from-to)	281-283
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	9
DOIs	https://doi.org/10.1149/1.2754390
State	Published - 1 Jan 2007

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@article{fdb47246ec54471f88ac206adc80cd5e,

title = "Dynamic threshold switching Behavior of Ge2Sb2Te5and Sb-doped Ge2Sb2Te5thin films using scanning electrical nanoprobe",

abstract = "The dynamic oscillation in the current-time characteristics of Ge2 Sb2 Te5 and Sb-doped Ge2 Sb2 Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2 Sb2 Te5 and doped Ge2 Sb2 Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2 Sb2 Te5 during postannealing at 300°C. Sb-doping also increased the threshold switching speed.",

author = "P. Zhou and Shin, \{Y. C.\} and Choi, \{B. J.\} and S. Choi and Hwang, \{C. S.\} and Lin, \{Y. Y.\} and Lv, \{H. B.\} and Yan, \{X. J.\} and Tang, \{T. A.\} and Chen, \{L. Y.\} and Chen, \{B. M.\}",

year = "2007",

month = jan,

day = "1",

doi = "10.1149/1.2754390",

language = "English",

volume = "10",

pages = "281--283",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

number = "9",

}

TY - JOUR

T1 - Dynamic threshold switching Behavior of Ge2Sb2Te5and Sb-doped Ge2Sb2Te5thin films using scanning electrical nanoprobe

AU - Zhou, P.

AU - Shin, Y. C.

AU - Choi, B. J.

AU - Choi, S.

AU - Hwang, C. S.

AU - Lin, Y. Y.

AU - Lv, H. B.

AU - Yan, X. J.

AU - Tang, T. A.

AU - Chen, L. Y.

AU - Chen, B. M.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - The dynamic oscillation in the current-time characteristics of Ge2 Sb2 Te5 and Sb-doped Ge2 Sb2 Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2 Sb2 Te5 and doped Ge2 Sb2 Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2 Sb2 Te5 during postannealing at 300°C. Sb-doping also increased the threshold switching speed.

AB - The dynamic oscillation in the current-time characteristics of Ge2 Sb2 Te5 and Sb-doped Ge2 Sb2 Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2 Sb2 Te5 and doped Ge2 Sb2 Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2 Sb2 Te5 during postannealing at 300°C. Sb-doping also increased the threshold switching speed.

UR - https://www.scopus.com/pages/publications/34547149985

U2 - 10.1149/1.2754390

DO - 10.1149/1.2754390

M3 - Article

AN - SCOPUS:34547149985

SN - 1099-0062

VL - 10

SP - 281

EP - 283

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 9

ER -

Dynamic threshold switching Behavior of Ge₂Sb₂Te₅and Sb-doped Ge₂Sb₂Te₅thin films using scanning electrical nanoprobe

Abstract

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