Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/Ge triple junction solar cells

Sang Hyun Jung; Chang Zoo Kim; Dong Hwan Jun; Wonkyu Park; Ho Kwan Kang; Jaejin Lee; Hogyoung Kim

doi:10.1016/j.cap.2014.08.020

Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/Ge triple junction solar cells

Sang Hyun Jung, Chang Zoo Kim, Dong Hwan Jun, Wonkyu Park, Ho Kwan Kang, Jaejin Lee, Hogyoung Kim

Dept. of Optometry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

As an effort to improve the conversion efficiency of InGaP/InGaAs/Ge triple junction solar cells, we investigated the effect of AlGaAs barrier layer on the cell performance under concentrated light condition. Three different solar cells having upper tunnel junctions (TJs) as n⁺⁺-GaAs/p⁺⁺-AlGaAs layers, n⁺⁺-GaAs/p⁺⁺-GaAs layers and n⁺⁺-GaAs/p⁺⁺-GaAs/p⁺⁺-AlGaAs layers were prepared. Under concentrated light condition, open-circuit voltage (V_OC), fill factor (FF) and conversion efficiencies were higher for the sample with an AlGaAs barrier layer than the samples without an AlGaAs barrier layer. For the sample with an AlGaAs barrier layer, external quantum efficiency was higher than other two samples. Most of all, the sample with a TJ as n⁺⁺-GaAs/p⁺⁺-GaAs layers showed a very poor electrical performance, which was associated with an imperfect crystalline quality of the InGaP top cell layers.

Original language	English
Pages (from-to)	1476-1480
Number of pages	5
Journal	Current Applied Physics
Volume	14
Issue number	11
DOIs	https://doi.org/10.1016/j.cap.2014.08.020
State	Published - Nov 2014

Keywords

AlGaAs barrier layer
Conversion efficiency
Solar cells
Tunnel junctions

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.cap.2014.08.020

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title = "Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/Ge triple junction solar cells",

abstract = "As an effort to improve the conversion efficiency of InGaP/InGaAs/Ge triple junction solar cells, we investigated the effect of AlGaAs barrier layer on the cell performance under concentrated light condition. Three different solar cells having upper tunnel junctions (TJs) as n++-GaAs/p++-AlGaAs layers, n++-GaAs/p++-GaAs layers and n++-GaAs/p++-GaAs/p++-AlGaAs layers were prepared. Under concentrated light condition, open-circuit voltage (VOC), fill factor (FF) and conversion efficiencies were higher for the sample with an AlGaAs barrier layer than the samples without an AlGaAs barrier layer. For the sample with an AlGaAs barrier layer, external quantum efficiency was higher than other two samples. Most of all, the sample with a TJ as n++-GaAs/p++-GaAs layers showed a very poor electrical performance, which was associated with an imperfect crystalline quality of the InGaP top cell layers.",

keywords = "AlGaAs barrier layer, Conversion efficiency, Solar cells, Tunnel junctions",

author = "Jung, \{Sang Hyun\} and Kim, \{Chang Zoo\} and Jun, \{Dong Hwan\} and Wonkyu Park and Kang, \{Ho Kwan\} and Jaejin Lee and Hogyoung Kim",

year = "2014",

month = nov,

doi = "10.1016/j.cap.2014.08.020",

language = "English",

volume = "14",

pages = "1476--1480",

journal = "Current Applied Physics",

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T1 - Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/Ge triple junction solar cells

AU - Jung, Sang Hyun

AU - Kim, Chang Zoo

AU - Jun, Dong Hwan

AU - Park, Wonkyu

AU - Kang, Ho Kwan

AU - Lee, Jaejin

AU - Kim, Hogyoung

PY - 2014/11

Y1 - 2014/11

N2 - As an effort to improve the conversion efficiency of InGaP/InGaAs/Ge triple junction solar cells, we investigated the effect of AlGaAs barrier layer on the cell performance under concentrated light condition. Three different solar cells having upper tunnel junctions (TJs) as n++-GaAs/p++-AlGaAs layers, n++-GaAs/p++-GaAs layers and n++-GaAs/p++-GaAs/p++-AlGaAs layers were prepared. Under concentrated light condition, open-circuit voltage (VOC), fill factor (FF) and conversion efficiencies were higher for the sample with an AlGaAs barrier layer than the samples without an AlGaAs barrier layer. For the sample with an AlGaAs barrier layer, external quantum efficiency was higher than other two samples. Most of all, the sample with a TJ as n++-GaAs/p++-GaAs layers showed a very poor electrical performance, which was associated with an imperfect crystalline quality of the InGaP top cell layers.

AB - As an effort to improve the conversion efficiency of InGaP/InGaAs/Ge triple junction solar cells, we investigated the effect of AlGaAs barrier layer on the cell performance under concentrated light condition. Three different solar cells having upper tunnel junctions (TJs) as n++-GaAs/p++-AlGaAs layers, n++-GaAs/p++-GaAs layers and n++-GaAs/p++-GaAs/p++-AlGaAs layers were prepared. Under concentrated light condition, open-circuit voltage (VOC), fill factor (FF) and conversion efficiencies were higher for the sample with an AlGaAs barrier layer than the samples without an AlGaAs barrier layer. For the sample with an AlGaAs barrier layer, external quantum efficiency was higher than other two samples. Most of all, the sample with a TJ as n++-GaAs/p++-GaAs layers showed a very poor electrical performance, which was associated with an imperfect crystalline quality of the InGaP top cell layers.

KW - AlGaAs barrier layer

KW - Conversion efficiency

KW - Solar cells

KW - Tunnel junctions

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U2 - 10.1016/j.cap.2014.08.020

DO - 10.1016/j.cap.2014.08.020

M3 - Article

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SN - 1567-1739

VL - 14

SP - 1476

EP - 1480

JO - Current Applied Physics

JF - Current Applied Physics

IS - 11

ER -

Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/Ge triple junction solar cells

Abstract

Keywords

UN SDGs

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