Effect of crystalline structure of TiO                         2                          substrates on initial growth of atomic layer deposited Ru thin films

Seong Keun Kim; Sora Han; Jeong Hwan Han; Cheol Seong Hwang

doi:10.1016/j.apsusc.2010.12.043

Effect of crystalline structure of TiO ₂ substrates on initial growth of atomic layer deposited Ru thin films

Seong Keun Kim
, Sora Han
, Jeong Hwan Han
, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Ru thin films were grown on polymorphic TiO ₂ thin film substrates at 230 and 250 °C by atomic layer deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and an O ₂ gas. While the Ru films grown on amorphous and rutile TiO ₂ substrates showed a relatively long incubation cycle number of approximately 350 and 100 at 230 and 250 °C, respectively, the Ru films grown on anatase TiO ₂ substrates exhibited a significantly shorter incubation delay which was attributed to the catalytic activity of anatase TiO ₂ . This difference in the incubation cycle affected the surface morphology of the Ru films on different TiO ₂ substrates.

Original language	English
Pages (from-to)	4302-4305
Number of pages	4
Journal	Applied Surface Science
Volume	257
Issue number	9
DOIs	https://doi.org/10.1016/j.apsusc.2010.12.043
State	Published - 15 Feb 2011

Keywords

Atomic layer deposition
Initial growth
Ru

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10.1016/j.apsusc.2010.12.043

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title = " Effect of crystalline structure of TiO 2 substrates on initial growth of atomic layer deposited Ru thin films ",

abstract = " Ru thin films were grown on polymorphic TiO 2 thin film substrates at 230 and 250 °C by atomic layer deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and an O 2 gas. While the Ru films grown on amorphous and rutile TiO 2 substrates showed a relatively long incubation cycle number of approximately 350 and 100 at 230 and 250 °C, respectively, the Ru films grown on anatase TiO 2 substrates exhibited a significantly shorter incubation delay which was attributed to the catalytic activity of anatase TiO 2 . This difference in the incubation cycle affected the surface morphology of the Ru films on different TiO 2 substrates.",

keywords = "Atomic layer deposition, Initial growth, Ru",

author = "Kim, \{Seong Keun\} and Sora Han and Han, \{Jeong Hwan\} and Hwang, \{Cheol Seong\}",

year = "2011",

month = feb,

day = "15",

doi = "10.1016/j.apsusc.2010.12.043",

language = "English",

volume = "257",

pages = "4302--4305",

journal = "Applied Surface Science",

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Effect of crystalline structure of TiO ₂ substrates on initial growth of atomic layer deposited Ru thin films . / Kim, Seong Keun; Han, Sora; Han, Jeong Hwan et al.
In: Applied Surface Science, Vol. 257, No. 9, 15.02.2011, p. 4302-4305.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of crystalline structure of TiO 2 substrates on initial growth of atomic layer deposited Ru thin films

AU - Kim, Seong Keun

AU - Han, Sora

AU - Han, Jeong Hwan

AU - Hwang, Cheol Seong

PY - 2011/2/15

Y1 - 2011/2/15

N2 - Ru thin films were grown on polymorphic TiO 2 thin film substrates at 230 and 250 °C by atomic layer deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and an O 2 gas. While the Ru films grown on amorphous and rutile TiO 2 substrates showed a relatively long incubation cycle number of approximately 350 and 100 at 230 and 250 °C, respectively, the Ru films grown on anatase TiO 2 substrates exhibited a significantly shorter incubation delay which was attributed to the catalytic activity of anatase TiO 2 . This difference in the incubation cycle affected the surface morphology of the Ru films on different TiO 2 substrates.

AB - Ru thin films were grown on polymorphic TiO 2 thin film substrates at 230 and 250 °C by atomic layer deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and an O 2 gas. While the Ru films grown on amorphous and rutile TiO 2 substrates showed a relatively long incubation cycle number of approximately 350 and 100 at 230 and 250 °C, respectively, the Ru films grown on anatase TiO 2 substrates exhibited a significantly shorter incubation delay which was attributed to the catalytic activity of anatase TiO 2 . This difference in the incubation cycle affected the surface morphology of the Ru films on different TiO 2 substrates.

KW - Atomic layer deposition

KW - Initial growth

KW - Ru

UR - https://www.scopus.com/pages/publications/78951491594

U2 - 10.1016/j.apsusc.2010.12.043

DO - 10.1016/j.apsusc.2010.12.043

M3 - Article

AN - SCOPUS:78951491594

SN - 0169-4332

VL - 257

SP - 4302

EP - 4305

JO - Applied Surface Science

JF - Applied Surface Science

IS - 9

ER -

Effect of crystalline structure of TiO ₂ substrates on initial growth of atomic layer deposited Ru thin films

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