Effect of electrode material on the crystallization of GeTe grown by atomic layer deposition for phase change random access memory

Seung Ik Oh; In Hyuk Im; Chanyoung Yoo; Sung Yeon Ryu; Yong Kim; Seok Choi; Taeyong Eom; Cheol Seong Hwang; Byung Joon Choi

doi:10.3390/mi10050281

Effect of electrode material on the crystallization of GeTe grown by atomic layer deposition for phase change random access memory

Seung Ik Oh, In Hyuk Im, Chanyoung Yoo, Sung Yeon Ryu, Yong Kim, Seok Choi, Taeyong Eom, Cheol Seong Hwang, Byung Joon Choi

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN orWbottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson-Mehl-Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (~3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.

Original language	English
Article number	281
Journal	Micromachines
Volume	10
Issue number	5
DOIs	https://doi.org/10.3390/mi10050281
State	Published - 1 May 2019

Keywords

Crystallization behavior
Electrode interfacial layer effect
Johnson-Mehl-Avrami kinetics
Phase change random access memory

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10.3390/mi10050281

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@article{9a624744485e4f42bb483985a87edeef,

title = "Effect of electrode material on the crystallization of GeTe grown by atomic layer deposition for phase change random access memory",

abstract = "The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN orWbottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson-Mehl-Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (\textasciitilde{}3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.",

keywords = "Crystallization behavior, Electrode interfacial layer effect, Johnson-Mehl-Avrami kinetics, Phase change random access memory",

author = "Oh, \{Seung Ik\} and Im, \{In Hyuk\} and Chanyoung Yoo and Ryu, \{Sung Yeon\} and Yong Kim and Seok Choi and Taeyong Eom and Hwang, \{Cheol Seong\} and Choi, \{Byung Joon\}",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

month = may,

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doi = "10.3390/mi10050281",

language = "English",

volume = "10",

journal = "Micromachines",

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T1 - Effect of electrode material on the crystallization of GeTe grown by atomic layer deposition for phase change random access memory

AU - Oh, Seung Ik

AU - Im, In Hyuk

AU - Yoo, Chanyoung

AU - Ryu, Sung Yeon

AU - Kim, Yong

AU - Choi, Seok

AU - Eom, Taeyong

AU - Hwang, Cheol Seong

AU - Choi, Byung Joon

PY - 2019/5/1

Y1 - 2019/5/1

N2 - The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN orWbottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson-Mehl-Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (~3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.

AB - The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN orWbottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson-Mehl-Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (~3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.

KW - Crystallization behavior

KW - Electrode interfacial layer effect

KW - Johnson-Mehl-Avrami kinetics

KW - Phase change random access memory

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U2 - 10.3390/mi10050281

DO - 10.3390/mi10050281

M3 - Article

AN - SCOPUS:85073231768

SN - 2072-666X

VL - 10

JO - Micromachines

JF - Micromachines

IS - 5

M1 - 281

ER -

Effect of electrode material on the crystallization of GeTe grown by atomic layer deposition for phase change random access memory

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Keywords

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