Effect of heat transfer on the C49-C54 phase transformation in TiSi2 thin film

Zhang Lin; Khin Maung Latt; Y. K. Lee

doi:10.1016/S1369-8001(99)00038-4

Effect of heat transfer on the C49-C54 phase transformation in TiSi₂ thin film

Zhang Lin, Khin Maung Latt, Y. K. Lee

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, the effect of heat transfer on the C49-C54 phase transformation in TiSi₂ thin film was investigated for the first time. Variation of the height of the chamber in the furnace during the annealing process was found to affect the sheet resistance (Rs) value of TiSi₂. By employing a moderate height of the annealing chamber, which makes it possible for the gas molecules inside to be more turbulent, the reduction of Rs can be achieved. From the standpoint of heat transfer theory, it has been proved in this paper that the enhancement of the thermal energy exchange between the wafer and the surrounding ambient contributes to the low resistivity C54 phase formation.

Original language	English
Pages (from-to)	329-333
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	2
Issue number	4
DOIs	https://doi.org/10.1016/S1369-8001(99)00038-4
State	Published - 1 Dec 1999

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title = "Effect of heat transfer on the C49-C54 phase transformation in TiSi2 thin film",

abstract = "In this paper, the effect of heat transfer on the C49-C54 phase transformation in TiSi2 thin film was investigated for the first time. Variation of the height of the chamber in the furnace during the annealing process was found to affect the sheet resistance (Rs) value of TiSi2. By employing a moderate height of the annealing chamber, which makes it possible for the gas molecules inside to be more turbulent, the reduction of Rs can be achieved. From the standpoint of heat transfer theory, it has been proved in this paper that the enhancement of the thermal energy exchange between the wafer and the surrounding ambient contributes to the low resistivity C54 phase formation.",

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AU - Lee, Y. K.

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N2 - In this paper, the effect of heat transfer on the C49-C54 phase transformation in TiSi2 thin film was investigated for the first time. Variation of the height of the chamber in the furnace during the annealing process was found to affect the sheet resistance (Rs) value of TiSi2. By employing a moderate height of the annealing chamber, which makes it possible for the gas molecules inside to be more turbulent, the reduction of Rs can be achieved. From the standpoint of heat transfer theory, it has been proved in this paper that the enhancement of the thermal energy exchange between the wafer and the surrounding ambient contributes to the low resistivity C54 phase formation.

AB - In this paper, the effect of heat transfer on the C49-C54 phase transformation in TiSi2 thin film was investigated for the first time. Variation of the height of the chamber in the furnace during the annealing process was found to affect the sheet resistance (Rs) value of TiSi2. By employing a moderate height of the annealing chamber, which makes it possible for the gas molecules inside to be more turbulent, the reduction of Rs can be achieved. From the standpoint of heat transfer theory, it has been proved in this paper that the enhancement of the thermal energy exchange between the wafer and the surrounding ambient contributes to the low resistivity C54 phase formation.

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ER -

Effect of heat transfer on the C49-C54 phase transformation in TiSi₂ thin film

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