TY - GEN
T1 - Effect of Nitride Passivation on Cu Surface for Low Temperature Cu-to-Cu Bonding
AU - Park, Hae Sung
AU - Seo, Hankyeol
AU - Kim, Sarah Eunkyung
N1 - Publisher Copyright:
© 2019 JSPS 191st Committee on Innovative Interface Bonding Technology.
PY - 2019/5
Y1 - 2019/5
N2 - For low temperature Cu-to-Cu bonding process, copper nitride passivation on Cu surface was studied via two-step plasma treatments using argon and nitrogen gases. The two-step plasma treatment of copper nitride passivation was processed in a DC sputtering vacuum chamber. Cu surface was activated with Ar ion bombardment in Ar plasma and immediately followed by N plasma treatment for surface passivation. In this study, various parameters of Ar plasma such as RF power, working pressure and treatment time were controlled to find an optimal Cu surface where nitride passivation was formed. The degree of nitridation and oxidation after the plasma treatments was characterized quantitatively using XPS analysis. Lastly Cu-to-Cu bonding was performed at 300°C and the effect of copper nitride passivation on Cu bonding quality was evaluated by SAT and SEM analysis.
AB - For low temperature Cu-to-Cu bonding process, copper nitride passivation on Cu surface was studied via two-step plasma treatments using argon and nitrogen gases. The two-step plasma treatment of copper nitride passivation was processed in a DC sputtering vacuum chamber. Cu surface was activated with Ar ion bombardment in Ar plasma and immediately followed by N plasma treatment for surface passivation. In this study, various parameters of Ar plasma such as RF power, working pressure and treatment time were controlled to find an optimal Cu surface where nitride passivation was formed. The degree of nitridation and oxidation after the plasma treatments was characterized quantitatively using XPS analysis. Lastly Cu-to-Cu bonding was performed at 300°C and the effect of copper nitride passivation on Cu bonding quality was evaluated by SAT and SEM analysis.
UR - https://www.scopus.com/pages/publications/85068384008
U2 - 10.23919/LTB-3D.2019.8735112
DO - 10.23919/LTB-3D.2019.8735112
M3 - Conference contribution
AN - SCOPUS:85068384008
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
SP - 49
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -