Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC

Yan Shi; Yanbin Luo; J. Campi; Feng Yan; Yong K. Lee; Jian H. Zhao

doi:10.1049/el:19980444

Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC

Yan Shi
, Yanbin Luo
, J. Campi
, Feng Yan
, Yong K. Lee
, Jian H. Zhao

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The effect of post-metallisation annealing (PMA) on the effective fixed charge in thermally grown SiO₂ on 6H-SiC has been systematically studied. It is found that under a carefully controlled and optimised PMA condition, it is possible to reduce the effective fixed charge density for both p-type and n-type samples. The study covers an annealing temperature range 400-600°C in forming gas (5% hydrogen in nitrogen) for both p-type and n-type 6H-SiC. The optimum annealing conditions are reported.

Original language	English
Pages (from-to)	698-700
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	7
DOIs	https://doi.org/10.1049/el:19980444
State	Published - 2 Apr 1998

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title = "Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC",

abstract = "The effect of post-metallisation annealing (PMA) on the effective fixed charge in thermally grown SiO2 on 6H-SiC has been systematically studied. It is found that under a carefully controlled and optimised PMA condition, it is possible to reduce the effective fixed charge density for both p-type and n-type samples. The study covers an annealing temperature range 400-600°C in forming gas (5\% hydrogen in nitrogen) for both p-type and n-type 6H-SiC. The optimum annealing conditions are reported.",

author = "Yan Shi and Yanbin Luo and J. Campi and Feng Yan and Lee, \{Yong K.\} and Zhao, \{Jian H.\}",

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doi = "10.1049/el:19980444",

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journal = "Electronics Letters",

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TY - JOUR

T1 - Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC

AU - Shi, Yan

AU - Luo, Yanbin

AU - Campi, J.

AU - Yan, Feng

AU - Lee, Yong K.

AU - Zhao, Jian H.

PY - 1998/4/2

Y1 - 1998/4/2

N2 - The effect of post-metallisation annealing (PMA) on the effective fixed charge in thermally grown SiO2 on 6H-SiC has been systematically studied. It is found that under a carefully controlled and optimised PMA condition, it is possible to reduce the effective fixed charge density for both p-type and n-type samples. The study covers an annealing temperature range 400-600°C in forming gas (5% hydrogen in nitrogen) for both p-type and n-type 6H-SiC. The optimum annealing conditions are reported.

AB - The effect of post-metallisation annealing (PMA) on the effective fixed charge in thermally grown SiO2 on 6H-SiC has been systematically studied. It is found that under a carefully controlled and optimised PMA condition, it is possible to reduce the effective fixed charge density for both p-type and n-type samples. The study covers an annealing temperature range 400-600°C in forming gas (5% hydrogen in nitrogen) for both p-type and n-type 6H-SiC. The optimum annealing conditions are reported.

UR - https://www.scopus.com/pages/publications/0032473626

U2 - 10.1049/el:19980444

DO - 10.1049/el:19980444

M3 - Article

AN - SCOPUS:0032473626

SN - 0013-5194

VL - 34

SP - 698

EP - 700

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC

Abstract

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