Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC

J. Campi; Y. Shi; Y. Luo; F. Yan; Y. K. Lee; J. H. Zhao

doi:10.4028/www.scientific.net/msf.264-268.849

Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC

J. Campi, Y. Shi, Y. Luo, F. Yan, Y. K. Lee, J. H. Zhao

Dept. of Semiconductor Engineering

Rutgers - The State University of New Jersey, New Brunswick

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Effect of post-metallization annealing (PMA) on the quality of the thermally grown SiO₂ on 6H- and 4H-SiC has been systematically studied. It is found that under a carefully controlled and optimized PMA condition, it is possible to reduce the effective fixed charge density for both n type and p type 6H- and 4H-SiC. The study covers an annealing temperature range of 400 °C to 600 °C in forming gas (5% hydrogen in nitrogen) for various periods of time. Optimum annealing conditions for both 6H- and 4H-SiC will be reported. Also reported are excellent D_it values for both p type 6H- and p type 4H-SiC/SiO₂ structures.

Original language	English
Pages (from-to)	849-852
Number of pages	4
Journal	Materials Science Forum
Volume	264-268
Issue number	pt 2
DOIs	https://doi.org/10.4028/www.scientific.net/msf.264-268.849
State	Published - 1998
Event	Proceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII. Part 1 (of 2) - Stockholm, Sweden Duration: 30 Sep 1997 → …

Access to Document

10.4028/www.scientific.net/msf.264-268.849

Cite this

@article{0fedfda6c76b4505851fa139a9f36547,

title = "Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC",

abstract = "Effect of post-metallization annealing (PMA) on the quality of the thermally grown SiO2 on 6H- and 4H-SiC has been systematically studied. It is found that under a carefully controlled and optimized PMA condition, it is possible to reduce the effective fixed charge density for both n type and p type 6H- and 4H-SiC. The study covers an annealing temperature range of 400 °C to 600 °C in forming gas (5\% hydrogen in nitrogen) for various periods of time. Optimum annealing conditions for both 6H- and 4H-SiC will be reported. Also reported are excellent Dit values for both p type 6H- and p type 4H-SiC/SiO2 structures.",

author = "J. Campi and Y. Shi and Y. Luo and F. Yan and Lee, \{Y. K.\} and Zhao, \{J. H.\}",

year = "1998",

doi = "10.4028/www.scientific.net/msf.264-268.849",

language = "English",

volume = "264-268",

pages = "849--852",

journal = "Materials Science Forum",

issn = "0255-5476",

number = "pt 2",

note = "Proceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII. Part 1 (of 2) ; Conference date: 30-09-1997",

}

TY - JOUR

T1 - Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC

AU - Campi, J.

AU - Shi, Y.

AU - Luo, Y.

AU - Yan, F.

AU - Lee, Y. K.

AU - Zhao, J. H.

PY - 1998

Y1 - 1998

N2 - Effect of post-metallization annealing (PMA) on the quality of the thermally grown SiO2 on 6H- and 4H-SiC has been systematically studied. It is found that under a carefully controlled and optimized PMA condition, it is possible to reduce the effective fixed charge density for both n type and p type 6H- and 4H-SiC. The study covers an annealing temperature range of 400 °C to 600 °C in forming gas (5% hydrogen in nitrogen) for various periods of time. Optimum annealing conditions for both 6H- and 4H-SiC will be reported. Also reported are excellent Dit values for both p type 6H- and p type 4H-SiC/SiO2 structures.

AB - Effect of post-metallization annealing (PMA) on the quality of the thermally grown SiO2 on 6H- and 4H-SiC has been systematically studied. It is found that under a carefully controlled and optimized PMA condition, it is possible to reduce the effective fixed charge density for both n type and p type 6H- and 4H-SiC. The study covers an annealing temperature range of 400 °C to 600 °C in forming gas (5% hydrogen in nitrogen) for various periods of time. Optimum annealing conditions for both 6H- and 4H-SiC will be reported. Also reported are excellent Dit values for both p type 6H- and p type 4H-SiC/SiO2 structures.

UR - http://www.scopus.com/inward/record.url?scp=0031648650&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/msf.264-268.849

DO - 10.4028/www.scientific.net/msf.264-268.849

M3 - Conference article

AN - SCOPUS:0031648650

SN - 0255-5476

VL - 264-268

SP - 849

EP - 852

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 2

T2 - Proceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII. Part 1 (of 2)

Y2 - 30 September 1997

ER -

Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC

Abstract

Access to Document

Other files and links

Fingerprint

Cite this