Effect of radio frequency power on the properties of p-type SnO deposited via sputtering

Joseph Um; Byeong Min Roh; Sungdong Kim; Sarah Eunkyung Kim

doi:10.1016/j.mssp.2013.03.009

Effect of radio frequency power on the properties of p-type SnO deposited via sputtering

Joseph Um
, Byeong Min Roh
, Sungdong Kim
, Sarah Eunkyung Kim

Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

P-type SnO thin films were fabricated via radio frequency (rf) reactive magnetron sputtering on borosilicate substrates, with an Sn target and Ar/O ₂ gas mixture. As the rf power increased, the structural defects were formed in SnO thin films lowering the optical absorption edge. It was found that the SnO thin films showed a short-range ordered crystalline structure and the crystallinity was slightly improved as the rf power increased. The electrical conductivity of SnO thin films was increased as the rf power increased and at 300 W, the conductivity was 0.048 (Ω cm)^-1, but it exhibited the very poor mobility of 0.02 cm²/Vs.

Original language	English
Pages (from-to)	1679-1683
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	16
Issue number	6
DOIs	https://doi.org/10.1016/j.mssp.2013.03.009
State	Published - 2013

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Oxide semiconductor rf power Sputtering Tin oxide

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10.1016/j.mssp.2013.03.009

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title = "Effect of radio frequency power on the properties of p-type SnO deposited via sputtering",

abstract = "P-type SnO thin films were fabricated via radio frequency (rf) reactive magnetron sputtering on borosilicate substrates, with an Sn target and Ar/O 2 gas mixture. As the rf power increased, the structural defects were formed in SnO thin films lowering the optical absorption edge. It was found that the SnO thin films showed a short-range ordered crystalline structure and the crystallinity was slightly improved as the rf power increased. The electrical conductivity of SnO thin films was increased as the rf power increased and at 300 W, the conductivity was 0.048 (Ω cm)-1, but it exhibited the very poor mobility of 0.02 cm2/Vs.",

keywords = "Oxide semiconductor rf power Sputtering Tin oxide",

author = "Joseph Um and Roh, \{Byeong Min\} and Sungdong Kim and \{Eunkyung Kim\}, Sarah",

year = "2013",

doi = "10.1016/j.mssp.2013.03.009",

language = "English",

volume = "16",

pages = "1679--1683",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

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TY - JOUR

T1 - Effect of radio frequency power on the properties of p-type SnO deposited via sputtering

AU - Um, Joseph

AU - Roh, Byeong Min

AU - Kim, Sungdong

AU - Eunkyung Kim, Sarah

PY - 2013

Y1 - 2013

N2 - P-type SnO thin films were fabricated via radio frequency (rf) reactive magnetron sputtering on borosilicate substrates, with an Sn target and Ar/O 2 gas mixture. As the rf power increased, the structural defects were formed in SnO thin films lowering the optical absorption edge. It was found that the SnO thin films showed a short-range ordered crystalline structure and the crystallinity was slightly improved as the rf power increased. The electrical conductivity of SnO thin films was increased as the rf power increased and at 300 W, the conductivity was 0.048 (Ω cm)-1, but it exhibited the very poor mobility of 0.02 cm2/Vs.

AB - P-type SnO thin films were fabricated via radio frequency (rf) reactive magnetron sputtering on borosilicate substrates, with an Sn target and Ar/O 2 gas mixture. As the rf power increased, the structural defects were formed in SnO thin films lowering the optical absorption edge. It was found that the SnO thin films showed a short-range ordered crystalline structure and the crystallinity was slightly improved as the rf power increased. The electrical conductivity of SnO thin films was increased as the rf power increased and at 300 W, the conductivity was 0.048 (Ω cm)-1, but it exhibited the very poor mobility of 0.02 cm2/Vs.

KW - Oxide semiconductor rf power Sputtering Tin oxide

UR - https://www.scopus.com/pages/publications/84880062024

U2 - 10.1016/j.mssp.2013.03.009

DO - 10.1016/j.mssp.2013.03.009

M3 - Article

AN - SCOPUS:84880062024

SN - 1369-8001

VL - 16

SP - 1679

EP - 1683

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 6

ER -

Effect of radio frequency power on the properties of p-type SnO deposited via sputtering

Abstract

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Keywords

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