TY - JOUR
T1 - Effect of radio frequency power on the properties of p-type SnO deposited via sputtering
AU - Um, Joseph
AU - Roh, Byeong Min
AU - Kim, Sungdong
AU - Eunkyung Kim, Sarah
PY - 2013
Y1 - 2013
N2 - P-type SnO thin films were fabricated via radio frequency (rf) reactive magnetron sputtering on borosilicate substrates, with an Sn target and Ar/O 2 gas mixture. As the rf power increased, the structural defects were formed in SnO thin films lowering the optical absorption edge. It was found that the SnO thin films showed a short-range ordered crystalline structure and the crystallinity was slightly improved as the rf power increased. The electrical conductivity of SnO thin films was increased as the rf power increased and at 300 W, the conductivity was 0.048 (Ω cm)-1, but it exhibited the very poor mobility of 0.02 cm2/Vs.
AB - P-type SnO thin films were fabricated via radio frequency (rf) reactive magnetron sputtering on borosilicate substrates, with an Sn target and Ar/O 2 gas mixture. As the rf power increased, the structural defects were formed in SnO thin films lowering the optical absorption edge. It was found that the SnO thin films showed a short-range ordered crystalline structure and the crystallinity was slightly improved as the rf power increased. The electrical conductivity of SnO thin films was increased as the rf power increased and at 300 W, the conductivity was 0.048 (Ω cm)-1, but it exhibited the very poor mobility of 0.02 cm2/Vs.
KW - Oxide semiconductor rf power Sputtering Tin oxide
UR - https://www.scopus.com/pages/publications/84880062024
U2 - 10.1016/j.mssp.2013.03.009
DO - 10.1016/j.mssp.2013.03.009
M3 - Article
AN - SCOPUS:84880062024
SN - 1369-8001
VL - 16
SP - 1679
EP - 1683
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
IS - 6
ER -
