Effect of ZnO Interlayer on Pt/4H–SiC Schottky Contact

Hogyoung Kim; Myeong Jun Jung; Byung Joon Choi

doi:10.1007/s42341-022-00400-0

Effect of ZnO Interlayer on Pt/4H–SiC Schottky Contact

Hogyoung Kim, Myeong Jun Jung, Byung Joon Choi

Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, atomic layer deposition of ZnO on an n-type 4H–SiC was performed, and the electrical characteristics of Pt/4H–SiC Schottky junctions with the ZnO interlayer (IL) were investigated. The analysis of the forward current characteristics using the thermionic emission model revealed a higher Schottky barrier height and ideality factor for the Pt/SiC contact with the ZnO IL. The thermionic field emission model was found to suitably explain the forward current conduction for samples with and without the ZnO IL. Furthermore, the Pt/SiC contact with the ZnO IL exhibited higher densities of surface states and fixed oxide charges. It could be inferred from the results that the interfacial dipole formed at the Pt/ZnO interface blocked the current transport and shifted the minimum current position towards negative voltages.

Original language	English
Pages (from-to)	337-342
Number of pages	6
Journal	Transactions on Electrical and Electronic Materials
Volume	23
Issue number	4
DOIs	https://doi.org/10.1007/s42341-022-00400-0
State	Published - Aug 2022

Keywords

Barrier height
Surface states
Thermionic field emission
ZnO interlayer

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10.1007/s42341-022-00400-0

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title = "Effect of ZnO Interlayer on Pt/4H–SiC Schottky Contact",

abstract = "In this study, atomic layer deposition of ZnO on an n-type 4H–SiC was performed, and the electrical characteristics of Pt/4H–SiC Schottky junctions with the ZnO interlayer (IL) were investigated. The analysis of the forward current characteristics using the thermionic emission model revealed a higher Schottky barrier height and ideality factor for the Pt/SiC contact with the ZnO IL. The thermionic field emission model was found to suitably explain the forward current conduction for samples with and without the ZnO IL. Furthermore, the Pt/SiC contact with the ZnO IL exhibited higher densities of surface states and fixed oxide charges. It could be inferred from the results that the interfacial dipole formed at the Pt/ZnO interface blocked the current transport and shifted the minimum current position towards negative voltages.",

keywords = "Barrier height, Surface states, Thermionic field emission, ZnO interlayer",

author = "Hogyoung Kim and Jung, \{Myeong Jun\} and Choi, \{Byung Joon\}",

note = "Publisher Copyright: {\textcopyright} 2022, The Korean Institute of Electrical and Electronic Material Engineers.",

year = "2022",

month = aug,

doi = "10.1007/s42341-022-00400-0",

language = "English",

volume = "23",

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journal = "Transactions on Electrical and Electronic Materials",

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TY - JOUR

T1 - Effect of ZnO Interlayer on Pt/4H–SiC Schottky Contact

AU - Kim, Hogyoung

AU - Jung, Myeong Jun

AU - Choi, Byung Joon

PY - 2022/8

Y1 - 2022/8

N2 - In this study, atomic layer deposition of ZnO on an n-type 4H–SiC was performed, and the electrical characteristics of Pt/4H–SiC Schottky junctions with the ZnO interlayer (IL) were investigated. The analysis of the forward current characteristics using the thermionic emission model revealed a higher Schottky barrier height and ideality factor for the Pt/SiC contact with the ZnO IL. The thermionic field emission model was found to suitably explain the forward current conduction for samples with and without the ZnO IL. Furthermore, the Pt/SiC contact with the ZnO IL exhibited higher densities of surface states and fixed oxide charges. It could be inferred from the results that the interfacial dipole formed at the Pt/ZnO interface blocked the current transport and shifted the minimum current position towards negative voltages.

AB - In this study, atomic layer deposition of ZnO on an n-type 4H–SiC was performed, and the electrical characteristics of Pt/4H–SiC Schottky junctions with the ZnO interlayer (IL) were investigated. The analysis of the forward current characteristics using the thermionic emission model revealed a higher Schottky barrier height and ideality factor for the Pt/SiC contact with the ZnO IL. The thermionic field emission model was found to suitably explain the forward current conduction for samples with and without the ZnO IL. Furthermore, the Pt/SiC contact with the ZnO IL exhibited higher densities of surface states and fixed oxide charges. It could be inferred from the results that the interfacial dipole formed at the Pt/ZnO interface blocked the current transport and shifted the minimum current position towards negative voltages.

KW - Barrier height

KW - Surface states

KW - Thermionic field emission

KW - ZnO interlayer

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U2 - 10.1007/s42341-022-00400-0

DO - 10.1007/s42341-022-00400-0

M3 - Article

AN - SCOPUS:85130694708

SN - 1229-7607

VL - 23

SP - 337

EP - 342

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 4

ER -

Effect of ZnO Interlayer on Pt/4H–SiC Schottky Contact

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Keywords

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