Effective enhancement of C54 TiSi₂ phase formation with multi-thermal-shock processing at 600 °C

Enhancing C54 TiSi₂ phase formation and reducing its formation temperature are two key issues in ultralarge-scale integration semiconductor industry. This work demonstrated that the formation of C54 TiSi₂ phase can be effectively enhanced and the processing temperature can be reduced by 150-200 °C through multi-thermal-shock processing. The result shows that the resistivity of the TiSi₂ compound decreased with increasing thermal shock frequency and consequently reached 15.90 μΩ cm at 600 °C. It is believed that the enhancement of C54 phase formation is due to the increase of internal energy of C49 crystals, which is caused by multi-thermal-shock processing.