Effects of Argon and Nitrogen ion Bombardments on Sputtered and Electroplated Cu Surfaces for Cu Bonding Application

Han Kyeol Seo, Hae Sung Park, Sarah Eunkyung Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

This study depicts the comparative research between sputtered and electroplated Cu surfaces using argon and nitrogen ion bombardments to form copper nitride passivation layers. The thin copper nitride layer is formed in order to prohibit Cu oxidation on copper surface and to lower bonding temperature in Cu-Cu thermo-compression bonding process. Argon ion bombardment was applied to activate and clean copper surface. Nitrogen ion bombardment was utilized to passivate the Cu surface after argon ion bombardment. The sputtered Cu surface tended to form Cu4N layer, while the electroplated Cu surface tended to form Cu3N layer. In comparison with electroplated Cu, the sputtered Cu had a lower roughness and a slightly higher sheet resistance. The bonding quality of the sputtered Cu samples was better than that of the electroplated samples. Further research should improve the roughness and copper nitride properties of the Cu surface.

Original languageEnglish
Title of host publicationIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728148700
DOIs
StatePublished - Oct 2019
Event2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan
Duration: 8 Oct 201910 Oct 2019

Publication series

NameIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019

Conference

Conference2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
Country/TerritoryJapan
CitySendai
Period8/10/1910/10/19

Keywords

  • 3D integration
  • copper nitride
  • low temperature Cu bonding
  • plasma activation

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