Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films

Byung Joon Choi; I. Wei Chen

doi:10.1007/s00339-013-7776-2

Effects of moisture barriers on resistive switching in Pt-dispersed SiO₂ nanometallic thin films

Byung Joon Choi
, I. Wei Chen

Dept. of Materials Science & Engineering

University of Pennsylvania

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Moisture invasion into memory devices can result in data loss and malfunctions in write/erase switching. Deteriorated uniformity and retention characteristics, and distorted switching hysteresis loops, are observed in moisture-attacked Pt-dispersed SiO₂ nanometallic thin-film devices, and can be effectively prevented by coating the device with a nanoscale Al ₂O₃ barrier layer grown by an atomic layer deposition method. The moisture-attacked devices exhibit evidence of cumulating ion current and ion potential with repeated switching. In contrast, a capped device with an extremely uniform and reproducible resistive switching behavior features a completely symmetric current-voltage curve expected for a purely electronic device.

Original language	English
Pages (from-to)	235-239
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	112
Issue number	2
DOIs	https://doi.org/10.1007/s00339-013-7776-2
State	Published - Aug 2013

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title = "Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films",

abstract = "Moisture invasion into memory devices can result in data loss and malfunctions in write/erase switching. Deteriorated uniformity and retention characteristics, and distorted switching hysteresis loops, are observed in moisture-attacked Pt-dispersed SiO2 nanometallic thin-film devices, and can be effectively prevented by coating the device with a nanoscale Al 2O3 barrier layer grown by an atomic layer deposition method. The moisture-attacked devices exhibit evidence of cumulating ion current and ion potential with repeated switching. In contrast, a capped device with an extremely uniform and reproducible resistive switching behavior features a completely symmetric current-voltage curve expected for a purely electronic device.",

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AU - Chen, I. Wei

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N2 - Moisture invasion into memory devices can result in data loss and malfunctions in write/erase switching. Deteriorated uniformity and retention characteristics, and distorted switching hysteresis loops, are observed in moisture-attacked Pt-dispersed SiO2 nanometallic thin-film devices, and can be effectively prevented by coating the device with a nanoscale Al 2O3 barrier layer grown by an atomic layer deposition method. The moisture-attacked devices exhibit evidence of cumulating ion current and ion potential with repeated switching. In contrast, a capped device with an extremely uniform and reproducible resistive switching behavior features a completely symmetric current-voltage curve expected for a purely electronic device.

AB - Moisture invasion into memory devices can result in data loss and malfunctions in write/erase switching. Deteriorated uniformity and retention characteristics, and distorted switching hysteresis loops, are observed in moisture-attacked Pt-dispersed SiO2 nanometallic thin-film devices, and can be effectively prevented by coating the device with a nanoscale Al 2O3 barrier layer grown by an atomic layer deposition method. The moisture-attacked devices exhibit evidence of cumulating ion current and ion potential with repeated switching. In contrast, a capped device with an extremely uniform and reproducible resistive switching behavior features a completely symmetric current-voltage curve expected for a purely electronic device.

UR - https://www.scopus.com/pages/publications/84880296318

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Effects of moisture barriers on resistive switching in Pt-dispersed SiO₂ nanometallic thin films

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