TY - JOUR
T1 - Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors
AU - Lee, Neung Hee
AU - Lee, Minseong
AU - Choi, Woojin
AU - Kim, Donghwan
AU - Jeon, Namcheol
AU - Choi, Seonhong
AU - Seo, Kwang Seok
PY - 2014/4
Y1 - 2014/4
N2 - The reduction in the gate leakage current and the improvement in subthreshold characteristics and current collapse in AlGaN/GaN highelectron-mobility transistors (HEMTs) with various surface treatments were investigated. We applied wet treatment, digital etching (O2 or N 2O), or plasma treatment (CF4 or SF6) before SiNx passivation. Among these treatments, SF6 plasma treatment suppressed gate leakage current, reduced subthreshold slope, and improved pulsed current-voltage (I-V) characteristics most effectively.
AB - The reduction in the gate leakage current and the improvement in subthreshold characteristics and current collapse in AlGaN/GaN highelectron-mobility transistors (HEMTs) with various surface treatments were investigated. We applied wet treatment, digital etching (O2 or N 2O), or plasma treatment (CF4 or SF6) before SiNx passivation. Among these treatments, SF6 plasma treatment suppressed gate leakage current, reduced subthreshold slope, and improved pulsed current-voltage (I-V) characteristics most effectively.
UR - https://www.scopus.com/pages/publications/84903272890
U2 - 10.7567/JJAP.53.04EF10
DO - 10.7567/JJAP.53.04EF10
M3 - Article
AN - SCOPUS:84903272890
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 SPEC. ISSUE
M1 - 04EF10
ER -