Abstract
The effect of interfaces states in Ag Schottky contacts on Zn-polar and O-polar bulk ZnO was investigated using current- voltage (I-V) measurements. Compared with Zn-polar ZnO, the barrier height was higher and the series resistance was lower for O-polar ZnO. The ideality factor versus voltage plot showed a peak for Zn-polar ZnO, which was associated with an interface state effect. The interface state density, calculated from I-V characteristics, was higher for Zn-polar ZnO. The results suggested that the hydrogen-related defects in Zn-polar ZnO were attributed to the high density of interface states.
| Original language | English |
|---|---|
| Pages (from-to) | 956-960 |
| Number of pages | 5 |
| Journal | Optoelectronics and Advanced Materials, Rapid Communications |
| Volume | 7 |
| Issue number | 11-12 |
| State | Published - 2013 |
Keywords
- Hydrogen-related defects
- Interface states
- Series resistance