Electrical and optical properties of FTO transparent conducting oxide film by spray pyrolysis and its XPS analysis based on F/Sn ratio

Chul Kyu Song; Chang Yeoul Kim; Seung Hun Huh; Doh Hyung Riu; Yong Ho Choa

doi:10.3740/MRSK.2007.17.7.376

Electrical and optical properties of FTO transparent conducting oxide film by spray pyrolysis and its XPS analysis based on F/Sn ratio

Chul Kyu Song, Chang Yeoul Kim, Seung Hun Huh, Doh Hyung Riu, Yong Ho Choa

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at 450°C by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of 3.0×10^-4Ω cm, the highest carrier concentration of 2.404×10²¹/cm³, and about 8 cm²/V sec of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of Sn⁴⁺-O bonding are the highest at 1.765 of F/Sn molar ratio.

Original language	English
Pages (from-to)	376-381
Number of pages	6
Journal	Korean Journal of Materials Research
Volume	17
Issue number	7
DOIs	https://doi.org/10.3740/MRSK.2007.17.7.376
State	Published - Jul 2007

Keywords

Fluorine doped tin oxide
Spray pyrolysis deposition
Transparent conducting oxide

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10.3740/MRSK.2007.17.7.376

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title = "Electrical and optical properties of FTO transparent conducting oxide film by spray pyrolysis and its XPS analysis based on F/Sn ratio",

abstract = "Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at 450°C by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of 3.0×10-4Ω cm, the highest carrier concentration of 2.404×1021/cm3, and about 8 cm2/V sec of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of Sn4+-O bonding are the highest at 1.765 of F/Sn molar ratio.",

keywords = "Fluorine doped tin oxide, Spray pyrolysis deposition, Transparent conducting oxide",

author = "Song, \{Chul Kyu\} and Kim, \{Chang Yeoul\} and Huh, \{Seung Hun\} and Riu, \{Doh Hyung\} and Choa, \{Yong Ho\}",

year = "2007",

month = jul,

doi = "10.3740/MRSK.2007.17.7.376",

language = "English",

volume = "17",

pages = "376--381",

journal = "Korean Journal of Materials Research",

issn = "1225-0562",

publisher = "Korea Federation of Science and Technology Bldg. 635-4, Rm 903, Yeoksarn-dong, Kangnarn-gu,Seoul 135-703",

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TY - JOUR

T1 - Electrical and optical properties of FTO transparent conducting oxide film by spray pyrolysis and its XPS analysis based on F/Sn ratio

AU - Song, Chul Kyu

AU - Kim, Chang Yeoul

AU - Huh, Seung Hun

AU - Riu, Doh Hyung

AU - Choa, Yong Ho

PY - 2007/7

Y1 - 2007/7

N2 - Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at 450°C by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of 3.0×10-4Ω cm, the highest carrier concentration of 2.404×1021/cm3, and about 8 cm2/V sec of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of Sn4+-O bonding are the highest at 1.765 of F/Sn molar ratio.

AB - Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at 450°C by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of 3.0×10-4Ω cm, the highest carrier concentration of 2.404×1021/cm3, and about 8 cm2/V sec of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of Sn4+-O bonding are the highest at 1.765 of F/Sn molar ratio.

KW - Fluorine doped tin oxide

KW - Spray pyrolysis deposition

KW - Transparent conducting oxide

UR - https://www.scopus.com/pages/publications/34548048655

U2 - 10.3740/MRSK.2007.17.7.376

DO - 10.3740/MRSK.2007.17.7.376

M3 - Article

AN - SCOPUS:34548048655

SN - 1225-0562

VL - 17

SP - 376

EP - 381

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

IS - 7

ER -

Electrical and optical properties of FTO transparent conducting oxide film by spray pyrolysis and its XPS analysis based on F/Sn ratio

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Keywords

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