TY - JOUR
T1 - Electrical characteristics of tin oxide films grown by thermal atomic layer deposition
AU - Yoon, Seong Yu
AU - Choi, Byung Joon
N1 - Publisher Copyright:
© 2020. The Author(s). This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial License (CC BY-NC 4.0, https://creativecommons.org/licenses/by-nc/4.0/deed.en which permits the use, redistribution of the material in any medium or format, transforming and building upon the material, provided that the article is properly cited, the use is noncommercial, and no modifications or adaptations are made.
PY - 2020
Y1 - 2020
N2 - Tin dioxide (SnO2) is an n-type semiconductor and has useful characteristics of high transmittance, excellent electrical properties, and chemical stability. Accordingly, it is widely used in a variety of fields, such as a gas sensor, photocatalyst, optoelectronics, and solar cell. In this study, SnO2 films are deposited by thermal atomic layer deposition (ALD) at 180°C using Tetrakis(dimethylamino) tin and water. A couple of 5.9, 7.4 and 10.1nm-thick SnO2 films are grown on SiO2/Si substrate and then each film is annealed at 400°C in oxygen atmosphere. Current transport of SnO2 films are analyzed by measuring current – voltage characteristics from room temperature to 150°C. It is concluded that electrical property of SnO2 film is concurrently affected by its semiconducting nature and oxidative adsorption on the surface.
AB - Tin dioxide (SnO2) is an n-type semiconductor and has useful characteristics of high transmittance, excellent electrical properties, and chemical stability. Accordingly, it is widely used in a variety of fields, such as a gas sensor, photocatalyst, optoelectronics, and solar cell. In this study, SnO2 films are deposited by thermal atomic layer deposition (ALD) at 180°C using Tetrakis(dimethylamino) tin and water. A couple of 5.9, 7.4 and 10.1nm-thick SnO2 films are grown on SiO2/Si substrate and then each film is annealed at 400°C in oxygen atmosphere. Current transport of SnO2 films are analyzed by measuring current – voltage characteristics from room temperature to 150°C. It is concluded that electrical property of SnO2 film is concurrently affected by its semiconducting nature and oxidative adsorption on the surface.
KW - Atomic layer deposition
KW - Electrical property
KW - Oxygen adsorption
KW - Tin oxide
UR - http://www.scopus.com/inward/record.url?scp=85086224778&partnerID=8YFLogxK
U2 - 10.24425/amm.2020.133214
DO - 10.24425/amm.2020.133214
M3 - Article
AN - SCOPUS:85086224778
SN - 1733-3490
VL - 65
SP - 1041
EP - 1044
JO - Archives of Metallurgy and Materials
JF - Archives of Metallurgy and Materials
IS - 3
ER -
