Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch

Byung Joon Choi; Antonio C. Torrezan; Kate J. Norris; Feng Miao; John Paul Strachan; Min Xian Zhang; Douglas A.A. Ohlberg; Nobuhiko P. Kobayashi; J. Joshua Yang; R. Stanley Williams

doi:10.1021/nl401283q

Electrical performance and scalability of Pt dispersed SiO₂ nanometallic resistance switch

Byung Joon Choi, Antonio C. Torrezan, Kate J. Norris, Feng Miao, John Paul Strachan, Min Xian Zhang, Douglas A.A. Ohlberg, Nobuhiko P. Kobayashi, J. Joshua Yang, R. Stanley Williams

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

188 Scopus citations

Abstract

Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 10⁷ cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.

Original language	English
Pages (from-to)	3213-3217
Number of pages	5
Journal	Nano Letters
Volume	13
Issue number	7
DOIs	https://doi.org/10.1021/nl401283q
State	Published - 10 Jul 2013

Keywords

memristor
nanocomposite materials
nanoelectronics
nanometallic switch
Resistive switching memory

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10.1021/nl401283q

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@article{7784721331084506b4ebda980c1480dd,

title = "Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch",

abstract = "Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 107 cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.",

keywords = "memristor, nanocomposite materials, nanoelectronics, nanometallic switch, Resistive switching memory",

author = "Choi, \{Byung Joon\} and Torrezan, \{Antonio C.\} and Norris, \{Kate J.\} and Feng Miao and Strachan, \{John Paul\} and Zhang, \{Min Xian\} and Ohlberg, \{Douglas A.A.\} and Kobayashi, \{Nobuhiko P.\} and Yang, \{J. Joshua\} and Williams, \{R. Stanley\}",

year = "2013",

month = jul,

day = "10",

doi = "10.1021/nl401283q",

language = "English",

volume = "13",

pages = "3213--3217",

journal = "Nano Letters",

issn = "1530-6984",

number = "7",

}

TY - JOUR

T1 - Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch

AU - Choi, Byung Joon

AU - Torrezan, Antonio C.

AU - Norris, Kate J.

AU - Miao, Feng

AU - Strachan, John Paul

AU - Zhang, Min Xian

AU - Ohlberg, Douglas A.A.

AU - Kobayashi, Nobuhiko P.

AU - Yang, J. Joshua

AU - Williams, R. Stanley

PY - 2013/7/10

Y1 - 2013/7/10

N2 - Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 107 cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.

AB - Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 107 cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.

KW - memristor

KW - nanocomposite materials

KW - nanoelectronics

KW - nanometallic switch

KW - Resistive switching memory

UR - http://www.scopus.com/inward/record.url?scp=84880167269&partnerID=8YFLogxK

U2 - 10.1021/nl401283q

DO - 10.1021/nl401283q

M3 - Article

AN - SCOPUS:84880167269

SN - 1530-6984

VL - 13

SP - 3213

EP - 3217

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

Electrical performance and scalability of Pt dispersed SiO₂ nanometallic resistance switch

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Keywords

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