Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch

Byung Joon Choi; Antonio C. Torrezan; Kate J. Norris; Feng Miao; John Paul Strachan; Min Xian Zhang; Douglas A.A. Ohlberg; Nobuhiko P. Kobayashi; J. Joshua Yang; R. Stanley Williams

doi:10.1021/nl401283q

Electrical performance and scalability of Pt dispersed SiO₂ nanometallic resistance switch

Byung Joon Choi
, Antonio C. Torrezan
, Kate J. Norris
, Feng Miao
, John Paul Strachan
, Min Xian Zhang
, Douglas A.A. Ohlberg
, Nobuhiko P. Kobayashi
, J. Joshua Yang
, R. Stanley Williams

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

190 Scopus citations

Abstract

Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 10⁷ cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.

Original language	English
Pages (from-to)	3213-3217
Number of pages	5
Journal	Nano Letters
Volume	13
Issue number	7
DOIs	https://doi.org/10.1021/nl401283q
State	Published - 10 Jul 2013

Keywords

memristor
nanocomposite materials
nanoelectronics
nanometallic switch
Resistive switching memory

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10.1021/nl401283q

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title = "Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch",

abstract = "Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 107 cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.",

keywords = "memristor, nanocomposite materials, nanoelectronics, nanometallic switch, Resistive switching memory",

author = "Choi, \{Byung Joon\} and Torrezan, \{Antonio C.\} and Norris, \{Kate J.\} and Feng Miao and Strachan, \{John Paul\} and Zhang, \{Min Xian\} and Ohlberg, \{Douglas A.A.\} and Kobayashi, \{Nobuhiko P.\} and Yang, \{J. Joshua\} and Williams, \{R. Stanley\}",

year = "2013",

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doi = "10.1021/nl401283q",

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T1 - Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch

AU - Choi, Byung Joon

AU - Torrezan, Antonio C.

AU - Norris, Kate J.

AU - Miao, Feng

AU - Strachan, John Paul

AU - Zhang, Min Xian

AU - Ohlberg, Douglas A.A.

AU - Kobayashi, Nobuhiko P.

AU - Yang, J. Joshua

AU - Williams, R. Stanley

PY - 2013/7/10

Y1 - 2013/7/10

N2 - Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 107 cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.

AB - Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 107 cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.

KW - memristor

KW - nanocomposite materials

KW - nanoelectronics

KW - nanometallic switch

KW - Resistive switching memory

UR - https://www.scopus.com/pages/publications/84880167269

U2 - 10.1021/nl401283q

DO - 10.1021/nl401283q

M3 - Article

AN - SCOPUS:84880167269

SN - 1530-6984

VL - 13

SP - 3213

EP - 3217

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

Electrical performance and scalability of Pt dispersed SiO₂ nanometallic resistance switch

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Keywords

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