Electrical properties of metal-oxide-semiconductor (MOS) structures on 4H-SiC(0001) formed by oxidizing pre-deposited SixNy

Jeong Hyun Moon; Dong Hwan Kim; Ho Keun Song; Jeong Hyuk Yim; Wook Bahng; Nam Kyun Kim; Kwang Seok Seo; Hyeong Joon Kim

doi:10.4028/www.scientific.net/MSF.556-557.647

Electrical properties of metal-oxide-semiconductor (MOS) structures on 4H-SiC(0001) formed by oxidizing pre-deposited Si_xN_y

Jeong Hyun Moon, Dong Hwan Kim, Ho Keun Song, Jeong Hyuk Yim, Wook Bahng, Nam Kyun Kim, Kwang Seok Seo, Hyeong Joon Kim

Dept. of Mechanical System and Design Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD Si_xN_y dielectric layers and investigated electrical properties of nitrided SiO₂/4H-SiC interface after oxidizing the Si_xN_y in dry oxygen at 1150 ℃ for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited Si_xN_y have been explained in this paper.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
Editors	N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall
Publisher	Trans Tech Publications Ltd
Pages	647-650
Number of pages	4
ISBN (Print)	0878494421, 9780878494422, 9780878494422
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.556-557.647
State	Published - 2007
Event	6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006 - Newcastle upon Tyne, United Kingdom Duration: 3 Sep 2006 → 7 Sep 2006

Publication series

Name	Materials Science Forum
Volume	556-557
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006
Country/Territory	United Kingdom
City	Newcastle upon Tyne
Period	3/09/06 → 7/09/06

Keywords

4H-SiC
Remote-Plasma Enhanced CVD (R-PECVD)
Thermal-nitrided SiO
Ultra thin SiN

Access to Document

10.4028/www.scientific.net/MSF.556-557.647

Cite this

Moon, J. H., Kim, D. H., Song, H. K., Yim, J. H., Bahng, W., Kim, N. K., Seo, K. S., & Kim, H. J. (2007). Electrical properties of metal-oxide-semiconductor (MOS) structures on 4H-SiC(0001) formed by oxidizing pre-deposited Si_xN_y. In N. Wright, C. M. Johnson, K. Vassilevski, I. Nikitina, & A. Horsfall (Eds.), Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials (pp. 647-650). (Materials Science Forum; Vol. 556-557). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.556-557.647

Moon, Jeong Hyun ; Kim, Dong Hwan ; Song, Ho Keun et al. / Electrical properties of metal-oxide-semiconductor (MOS) structures on 4H-SiC(0001) formed by oxidizing pre-deposited Si_xN_y. Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. editor / N. Wright ; C.M. Johnson ; K. Vassilevski ; I. Nikitina ; A. Horsfall. Trans Tech Publications Ltd, 2007. pp. 647-650 (Materials Science Forum).

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title = "Electrical properties of metal-oxide-semiconductor (MOS) structures on 4H-SiC(0001) formed by oxidizing pre-deposited SixNy",

abstract = "We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 ℃ for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.",

keywords = "4H-SiC, Remote-Plasma Enhanced CVD (R-PECVD), Thermal-nitrided SiO, Ultra thin SiN",

author = "Moon, \{Jeong Hyun\} and Kim, \{Dong Hwan\} and Song, \{Ho Keun\} and Yim, \{Jeong Hyuk\} and Wook Bahng and Kim, \{Nam Kyun\} and Seo, \{Kwang Seok\} and Kim, \{Hyeong Joon\}",

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Moon, JH, Kim, DH, Song, HK, Yim, JH, Bahng, W, Kim, NK, Seo, KS & Kim, HJ 2007, Electrical properties of metal-oxide-semiconductor (MOS) structures on 4H-SiC(0001) formed by oxidizing pre-deposited Si_xN_y. in N Wright, CM Johnson, K Vassilevski, I Nikitina & A Horsfall (eds), Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. Materials Science Forum, vol. 556-557, Trans Tech Publications Ltd, pp. 647-650, 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006, Newcastle upon Tyne, United Kingdom, 3/09/06. https://doi.org/10.4028/www.scientific.net/MSF.556-557.647

Electrical properties of metal-oxide-semiconductor (MOS) structures on 4H-SiC(0001) formed by oxidizing pre-deposited Si_xN_y. / Moon, Jeong Hyun; Kim, Dong Hwan; Song, Ho Keun et al.
Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. ed. / N. Wright; C.M. Johnson; K. Vassilevski; I. Nikitina; A. Horsfall. Trans Tech Publications Ltd, 2007. p. 647-650 (Materials Science Forum; Vol. 556-557).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yim, Jeong Hyuk

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AU - Seo, Kwang Seok

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AB - We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 ℃ for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.

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Moon JH, Kim DH, Song HK, Yim JH, Bahng W, Kim NK et al. Electrical properties of metal-oxide-semiconductor (MOS) structures on 4H-SiC(0001) formed by oxidizing pre-deposited Si_xN_y. In Wright N, Johnson CM, Vassilevski K, Nikitina I, Horsfall A, editors, Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. Trans Tech Publications Ltd. 2007. p. 647-650. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.556-557.647