Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

Boris Hudec; Kristína Hušeková; Aivar Tarre; Jeong Hwan Han; Sora Han; Alica Rosová; Woongkyu Lee; Aarne Kasikov; Seul Ji Song; Jaan Aarik; Cheol Seong Hwang; Karol Fröhlich

doi:10.1016/j.mee.2011.03.059

Electrical properties of TiO₂-based MIM capacitors deposited by TiCl₄ and TTIP based atomic layer deposition processes

Boris Hudec, Kristína Hušeková, Aivar Tarre, Jeong Hwan Han, Sora Han, Alica Rosová, Woongkyu Lee, Aarne Kasikov, Seul Ji Song, Jaan Aarik, Cheol Seong Hwang, Karol Fröhlich

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

In this work, we have prepared metal-insulator-metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO₂ high-κ dielectric and RuO₂ bottom electrode. We compare TiO₂ layers grown using TiCl₄ precursor or Ti-tetra-isopropoxide precursor, and Al-doped TiO₂ layers grown using Ti-tetra-isopropoxide precursor. The capacitors were analyzed in the terms of capacitance - voltage and current - voltage measurements and transmission electron microscopy imaging.

Original language	English
Pages (from-to)	1514-1516
Number of pages	3
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.059
State	Published - Jul 2011

Keywords

Al-doped
Al-doping
Capacitors
Dielectric
DRAM
Dynamic random access memory
EOT
High-κ
Leakage current
Metal-insulator-metal
MIM
RuO
TiO

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10.1016/j.mee.2011.03.059

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title = "Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes",

abstract = "In this work, we have prepared metal-insulator-metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO2 high-κ dielectric and RuO2 bottom electrode. We compare TiO2 layers grown using TiCl4 precursor or Ti-tetra-isopropoxide precursor, and Al-doped TiO2 layers grown using Ti-tetra-isopropoxide precursor. The capacitors were analyzed in the terms of capacitance - voltage and current - voltage measurements and transmission electron microscopy imaging.",

keywords = "Al-doped, Al-doping, Capacitors, Dielectric, DRAM, Dynamic random access memory, EOT, High-κ, Leakage current, Metal-insulator-metal, MIM, RuO, TiO",

author = "Boris Hudec and Krist{\'i}na Hu{\v s}ekov{\'a} and Aivar Tarre and Han, \{Jeong Hwan\} and Sora Han and Alica Rosov{\'a} and Woongkyu Lee and Aarne Kasikov and Song, \{Seul Ji\} and Jaan Aarik and Hwang, \{Cheol Seong\} and Karol Fr{\"o}hlich",

year = "2011",

month = jul,

doi = "10.1016/j.mee.2011.03.059",

language = "English",

volume = "88",

pages = "1514--1516",

journal = "Microelectronic Engineering",

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T1 - Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

AU - Hudec, Boris

AU - Hušeková, Kristína

AU - Tarre, Aivar

AU - Han, Jeong Hwan

AU - Han, Sora

AU - Rosová, Alica

AU - Lee, Woongkyu

AU - Kasikov, Aarne

AU - Song, Seul Ji

AU - Aarik, Jaan

AU - Hwang, Cheol Seong

AU - Fröhlich, Karol

PY - 2011/7

Y1 - 2011/7

N2 - In this work, we have prepared metal-insulator-metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO2 high-κ dielectric and RuO2 bottom electrode. We compare TiO2 layers grown using TiCl4 precursor or Ti-tetra-isopropoxide precursor, and Al-doped TiO2 layers grown using Ti-tetra-isopropoxide precursor. The capacitors were analyzed in the terms of capacitance - voltage and current - voltage measurements and transmission electron microscopy imaging.

AB - In this work, we have prepared metal-insulator-metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO2 high-κ dielectric and RuO2 bottom electrode. We compare TiO2 layers grown using TiCl4 precursor or Ti-tetra-isopropoxide precursor, and Al-doped TiO2 layers grown using Ti-tetra-isopropoxide precursor. The capacitors were analyzed in the terms of capacitance - voltage and current - voltage measurements and transmission electron microscopy imaging.

KW - Al-doped

KW - Al-doping

KW - Capacitors

KW - Dielectric

KW - DRAM

KW - Dynamic random access memory

KW - EOT

KW - High-κ

KW - Leakage current

KW - Metal-insulator-metal

KW - MIM

KW - RuO

KW - TiO

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SP - 1514

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7

ER -

Electrical properties of TiO₂-based MIM capacitors deposited by TiCl₄ and TTIP based atomic layer deposition processes

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Keywords

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