Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

Boris Hudec; Kristína Hušeková; Aivar Tarre; Jeong Hwan Han; Sora Han; Alica Rosová; Woongkyu Lee; Aarne Kasikov; Seul Ji Song; Jaan Aarik; Cheol Seong Hwang; Karol Fröhlich

doi:10.1016/j.mee.2011.03.059

Electrical properties of TiO₂-based MIM capacitors deposited by TiCl₄ and TTIP based atomic layer deposition processes

Boris Hudec
, Kristína Hušeková
, Aivar Tarre
, Jeong Hwan Han
, Sora Han
, Alica Rosová
, Woongkyu Lee
, Aarne Kasikov
, Seul Ji Song
, Jaan Aarik
, Cheol Seong Hwang
, Karol Fröhlich

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

In this work, we have prepared metal-insulator-metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO₂ high-κ dielectric and RuO₂ bottom electrode. We compare TiO₂ layers grown using TiCl₄ precursor or Ti-tetra-isopropoxide precursor, and Al-doped TiO₂ layers grown using Ti-tetra-isopropoxide precursor. The capacitors were analyzed in the terms of capacitance - voltage and current - voltage measurements and transmission electron microscopy imaging.

Original language	English
Pages (from-to)	1514-1516
Number of pages	3
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.059
State	Published - Jul 2011

Keywords

Al-doped
Al-doping
Capacitors
Dielectric
DRAM
Dynamic random access memory
EOT
High-κ
Leakage current
Metal-insulator-metal
MIM
RuO
TiO

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10.1016/j.mee.2011.03.059

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title = "Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes",

abstract = "In this work, we have prepared metal-insulator-metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO2 high-κ dielectric and RuO2 bottom electrode. We compare TiO2 layers grown using TiCl4 precursor or Ti-tetra-isopropoxide precursor, and Al-doped TiO2 layers grown using Ti-tetra-isopropoxide precursor. The capacitors were analyzed in the terms of capacitance - voltage and current - voltage measurements and transmission electron microscopy imaging.",

keywords = "Al-doped, Al-doping, Capacitors, Dielectric, DRAM, Dynamic random access memory, EOT, High-κ, Leakage current, Metal-insulator-metal, MIM, RuO, TiO",

author = "Boris Hudec and Krist{\'i}na Hu{\v s}ekov{\'a} and Aivar Tarre and Han, \{Jeong Hwan\} and Sora Han and Alica Rosov{\'a} and Woongkyu Lee and Aarne Kasikov and Song, \{Seul Ji\} and Jaan Aarik and Hwang, \{Cheol Seong\} and Karol Fr{\"o}hlich",

year = "2011",

month = jul,

doi = "10.1016/j.mee.2011.03.059",

language = "English",

volume = "88",

pages = "1514--1516",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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TY - JOUR

T1 - Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

AU - Hudec, Boris

AU - Hušeková, Kristína

AU - Tarre, Aivar

AU - Han, Jeong Hwan

AU - Han, Sora

AU - Rosová, Alica

AU - Lee, Woongkyu

AU - Kasikov, Aarne

AU - Song, Seul Ji

AU - Aarik, Jaan

AU - Hwang, Cheol Seong

AU - Fröhlich, Karol

PY - 2011/7

Y1 - 2011/7

N2 - In this work, we have prepared metal-insulator-metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO2 high-κ dielectric and RuO2 bottom electrode. We compare TiO2 layers grown using TiCl4 precursor or Ti-tetra-isopropoxide precursor, and Al-doped TiO2 layers grown using Ti-tetra-isopropoxide precursor. The capacitors were analyzed in the terms of capacitance - voltage and current - voltage measurements and transmission electron microscopy imaging.

AB - In this work, we have prepared metal-insulator-metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO2 high-κ dielectric and RuO2 bottom electrode. We compare TiO2 layers grown using TiCl4 precursor or Ti-tetra-isopropoxide precursor, and Al-doped TiO2 layers grown using Ti-tetra-isopropoxide precursor. The capacitors were analyzed in the terms of capacitance - voltage and current - voltage measurements and transmission electron microscopy imaging.

KW - Al-doped

KW - Al-doping

KW - Capacitors

KW - Dielectric

KW - DRAM

KW - Dynamic random access memory

KW - EOT

KW - High-κ

KW - Leakage current

KW - Metal-insulator-metal

KW - MIM

KW - RuO

KW - TiO

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U2 - 10.1016/j.mee.2011.03.059

DO - 10.1016/j.mee.2011.03.059

M3 - Article

AN - SCOPUS:79958036736

SN - 0167-9317

VL - 88

SP - 1514

EP - 1516

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7

ER -

Electrical properties of TiO₂-based MIM capacitors deposited by TiCl₄ and TTIP based atomic layer deposition processes

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Keywords

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