Electrically benign dry-etching method for rutile TiO2 thin-film capacitors with Ru electrodes

Kyung Min Kim; Sang Young Lee; Gyu Jin Choi; Jeong Hwan Han; Cheol Seong Hwang

doi:10.1149/1.3247971

Electrically benign dry-etching method for rutile TiO₂ thin-film capacitors with Ru electrodes

Kyung Min Kim, Sang Young Lee, Gyu Jin Choi, Jeong Hwan Han, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A technique for dry etching a rutile TiO₂ film in a Ru/ TiO ₂ /Ru capacitor structure was evaluated considering the electrical performance of the dielectric film. Ar+ Cl₂, CF₄, and SF₆ etching gases were used to dry etch the TiO₂ film. The Ar+ Cl₂ and CF₄ gases largely degraded the leakage current behavior, which was not recovered by the curing annealing process. The SF₆ etching gas maintained the intact leakage current performance, which was improved further by a cure annealing process. Although the SF ₆ etching gas produced by-products from a reaction with the photoresist, they were removed using the H₂ SO₄ + H ₂ O₂ cleaning solution.

Original language	English
Pages (from-to)	G1-G4
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	1
DOIs	https://doi.org/10.1149/1.3247971
State	Published - 2009

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@article{28abf2aba8d24f8b8a8af4e5f2f2dc16,

title = "Electrically benign dry-etching method for rutile TiO2 thin-film capacitors with Ru electrodes",

abstract = "A technique for dry etching a rutile TiO2 film in a Ru/ TiO 2 /Ru capacitor structure was evaluated considering the electrical performance of the dielectric film. Ar+ Cl2, CF4, and SF6 etching gases were used to dry etch the TiO2 film. The Ar+ Cl2 and CF4 gases largely degraded the leakage current behavior, which was not recovered by the curing annealing process. The SF6 etching gas maintained the intact leakage current performance, which was improved further by a cure annealing process. Although the SF 6 etching gas produced by-products from a reaction with the photoresist, they were removed using the H2 SO4 + H 2 O2 cleaning solution.",

author = "Kim, \{Kyung Min\} and Lee, \{Sang Young\} and Choi, \{Gyu Jin\} and Han, \{Jeong Hwan\} and Hwang, \{Cheol Seong\}",

year = "2009",

doi = "10.1149/1.3247971",

language = "English",

volume = "13",

pages = "G1--G4",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

number = "1",

}

TY - JOUR

T1 - Electrically benign dry-etching method for rutile TiO2 thin-film capacitors with Ru electrodes

AU - Kim, Kyung Min

AU - Lee, Sang Young

AU - Choi, Gyu Jin

AU - Han, Jeong Hwan

AU - Hwang, Cheol Seong

PY - 2009

Y1 - 2009

N2 - A technique for dry etching a rutile TiO2 film in a Ru/ TiO 2 /Ru capacitor structure was evaluated considering the electrical performance of the dielectric film. Ar+ Cl2, CF4, and SF6 etching gases were used to dry etch the TiO2 film. The Ar+ Cl2 and CF4 gases largely degraded the leakage current behavior, which was not recovered by the curing annealing process. The SF6 etching gas maintained the intact leakage current performance, which was improved further by a cure annealing process. Although the SF 6 etching gas produced by-products from a reaction with the photoresist, they were removed using the H2 SO4 + H 2 O2 cleaning solution.

AB - A technique for dry etching a rutile TiO2 film in a Ru/ TiO 2 /Ru capacitor structure was evaluated considering the electrical performance of the dielectric film. Ar+ Cl2, CF4, and SF6 etching gases were used to dry etch the TiO2 film. The Ar+ Cl2 and CF4 gases largely degraded the leakage current behavior, which was not recovered by the curing annealing process. The SF6 etching gas maintained the intact leakage current performance, which was improved further by a cure annealing process. Although the SF 6 etching gas produced by-products from a reaction with the photoresist, they were removed using the H2 SO4 + H 2 O2 cleaning solution.

UR - http://www.scopus.com/inward/record.url?scp=70450207627&partnerID=8YFLogxK

U2 - 10.1149/1.3247971

DO - 10.1149/1.3247971

M3 - Article

AN - SCOPUS:70450207627

SN - 1099-0062

VL - 13

SP - G1-G4

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 1

ER -

Electrically benign dry-etching method for rutile TiO₂ thin-film capacitors with Ru electrodes

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