TY - JOUR
T1 - Electrochemically n-Doped CsPbBr3 Nanocrystal Thin Films
AU - Heo, Sungyeon
AU - Roh, Kwangdong
AU - Zhang, Fengyu
AU - Tignor, Steven E.
AU - Bocarsly, Andrew B.
AU - Kahn, Antoine
AU - Rand, Barry P.
N1 - Publisher Copyright:
© 2021 American Chemical Society
PY - 2022/1/14
Y1 - 2022/1/14
N2 - Electrochemical doping is a promising strategy to dope halide perovskites without introducing impurities into the lattice. However, n-type doping of halide perovskites remains challenging due to intrinsically limited electrochemical stability. Herein, we report electrochemically n-doped CsPbBr3 nanocrystal (NC) films within electrochemically stable potential windows (−0.9–0.5 V vs Ag/AgNO3). Compared to bulk films with limited accessible surface area for cation charge compensation, NC films show more efficient n-doping properties due to their porous nature. Electrochemically doped NC films exhibit Fermi level shifts, confirmed via electrochemical measurements, vacuum-Kelvin probe contact potential difference, and photoelectron spectroscopy. As a result, in situ conductivity measurements show increases when films are p- or n-doped. Furthermore, n-doped films show a photoluminescence intensity increase. Given that we remain within the electrochemically stable window, we suspect this is due to an alleviation of electron traps, likely a result of altering the charge state of the interstitial Br population.
AB - Electrochemical doping is a promising strategy to dope halide perovskites without introducing impurities into the lattice. However, n-type doping of halide perovskites remains challenging due to intrinsically limited electrochemical stability. Herein, we report electrochemically n-doped CsPbBr3 nanocrystal (NC) films within electrochemically stable potential windows (−0.9–0.5 V vs Ag/AgNO3). Compared to bulk films with limited accessible surface area for cation charge compensation, NC films show more efficient n-doping properties due to their porous nature. Electrochemically doped NC films exhibit Fermi level shifts, confirmed via electrochemical measurements, vacuum-Kelvin probe contact potential difference, and photoelectron spectroscopy. As a result, in situ conductivity measurements show increases when films are p- or n-doped. Furthermore, n-doped films show a photoluminescence intensity increase. Given that we remain within the electrochemically stable window, we suspect this is due to an alleviation of electron traps, likely a result of altering the charge state of the interstitial Br population.
UR - http://www.scopus.com/inward/record.url?scp=85121580920&partnerID=8YFLogxK
U2 - 10.1021/acsenergylett.1c02554
DO - 10.1021/acsenergylett.1c02554
M3 - Article
AN - SCOPUS:85121580920
SN - 2380-8195
VL - 7
SP - 211
EP - 216
JO - ACS Energy Letters
JF - ACS Energy Letters
IS - 1
ER -
