Abstract
A large number of resistive-switching materials in classes of valence change and thermochemical memories need an initialization process, which is called electroforming, before they toggle between distinguishable resistance states. This sort of universality has brought electroforming to the notices of broad research communities on the emerging resistive-switching memories as well as the conventional dielectric breakdown. The long history of electroforming in metal-insulator-metal capacitors, which dates back to the 1960s, enriches a group of resistive-switchable materials and relevant mechanisms. The first part of this chapter (Section 10.1 and subsections therein) is dedicated to phenomenological descriptions of electroforming; for instance, experimental methods of electroforming in relation with the resulting resistive-switching and several important factors that influence the electroforming behavior. The second part (Section 10.2 and subsections therein)mainly describes proposed mechanisms for electroforming. They encompass early proposals (several decades ago) and current ones, which are mostly bridged with by defect chemistry. Lastly, several significant issues that are connected to electroforming are addressed from a technical standpoint.
| Original language | English |
|---|---|
| Title of host publication | Resistive Switching |
| Subtitle of host publication | from Fundamentals of Nanoionic Redox Processes to Memristive Device Applications |
| Publisher | wiley |
| Pages | 289-316 |
| Number of pages | 28 |
| ISBN (Electronic) | 9783527680870 |
| ISBN (Print) | 9783527334179 |
| DOIs | |
| State | Published - 1 Jan 2016 |
Keywords
- conducting filaments
- electroforming
- hyper-stoichiometry
- hypo-stoichiometry
- point defects
- transition metal oxides