Electron transport mechanisms in Ag Schottky contacts fabricated on O-polar and nonpolar m-plane bulk ZnO

Hogyoung Kim

doi:10.4313/TEEM.2015.16.5.285

Electron transport mechanisms in Ag Schottky contacts fabricated on O-polar and nonpolar m-plane bulk ZnO

Hogyoung Kim

Dept. of Optometry

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

Original language	English
Pages (from-to)	285-289
Number of pages	5
Journal	Transactions on Electrical and Electronic Materials
Volume	16
Issue number	5
DOIs	https://doi.org/10.4313/TEEM.2015.16.5.285
State	Published - Oct 2015

Keywords

Bulk ZnO
Current transport
Tunneling current

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10.4313/TEEM.2015.16.5.285

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title = "Electron transport mechanisms in Ag Schottky contacts fabricated on O-polar and nonpolar m-plane bulk ZnO",

abstract = "We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O2 and H2O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).",

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T1 - Electron transport mechanisms in Ag Schottky contacts fabricated on O-polar and nonpolar m-plane bulk ZnO

AU - Kim, Hogyoung

PY - 2015/10

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N2 - We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O2 and H2O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

AB - We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O2 and H2O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

KW - Bulk ZnO

KW - Current transport

KW - Tunneling current

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JO - Transactions on Electrical and Electronic Materials

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ER -

Electron transport mechanisms in Ag Schottky contacts fabricated on O-polar and nonpolar m-plane bulk ZnO

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