Electronic conduction mechanism of SrTiO3 thin film grown on ru electrode by atomic layer deposition

Sang Woon Lee; Jeong Hwan Han; Cheol Seong Hwang

doi:10.1149/1.3212897

Electronic conduction mechanism of SrTiO₃ thin film grown on ru electrode by atomic layer deposition

Sang Woon Lee, Jeong Hwan Han, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In situ crystallized 20 nm thick SrTiO₃ (STO) thin films were grown on a Ru substrate by atomic layer deposition. The leakage current-voltage characteristics of the film were examined from 313 to 403 K under electron injection conditions from the Ru electrode. The leakage current was dominated by Schottky emission in the low electric field (<∼0.3 MV/cm), and the barrier height of the STO/Ru interface was ∼0.47 eV. Fowler-Nordheim tunneling appeared to be the primary conduction mechanism in the high electric field (>0.3 MV/cm) region. The estimated effective mass of the tunneling electron was ∼0.1 m₀.

Original language	English
Pages (from-to)	G69-G71
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	11
DOIs	https://doi.org/10.1149/1.3212897
State	Published - 2009

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title = "Electronic conduction mechanism of SrTiO3 thin film grown on ru electrode by atomic layer deposition",

abstract = "In situ crystallized 20 nm thick SrTiO3 (STO) thin films were grown on a Ru substrate by atomic layer deposition. The leakage current-voltage characteristics of the film were examined from 313 to 403 K under electron injection conditions from the Ru electrode. The leakage current was dominated by Schottky emission in the low electric field (<∼0.3 MV/cm), and the barrier height of the STO/Ru interface was ∼0.47 eV. Fowler-Nordheim tunneling appeared to be the primary conduction mechanism in the high electric field (>0.3 MV/cm) region. The estimated effective mass of the tunneling electron was ∼0.1 m0.",

author = "Lee, \{Sang Woon\} and Han, \{Jeong Hwan\} and Hwang, \{Cheol Seong\}",

year = "2009",

doi = "10.1149/1.3212897",

language = "English",

volume = "12",

pages = "G69--G71",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

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T1 - Electronic conduction mechanism of SrTiO3 thin film grown on ru electrode by atomic layer deposition

AU - Lee, Sang Woon

AU - Han, Jeong Hwan

AU - Hwang, Cheol Seong

PY - 2009

Y1 - 2009

N2 - In situ crystallized 20 nm thick SrTiO3 (STO) thin films were grown on a Ru substrate by atomic layer deposition. The leakage current-voltage characteristics of the film were examined from 313 to 403 K under electron injection conditions from the Ru electrode. The leakage current was dominated by Schottky emission in the low electric field (<∼0.3 MV/cm), and the barrier height of the STO/Ru interface was ∼0.47 eV. Fowler-Nordheim tunneling appeared to be the primary conduction mechanism in the high electric field (>0.3 MV/cm) region. The estimated effective mass of the tunneling electron was ∼0.1 m0.

AB - In situ crystallized 20 nm thick SrTiO3 (STO) thin films were grown on a Ru substrate by atomic layer deposition. The leakage current-voltage characteristics of the film were examined from 313 to 403 K under electron injection conditions from the Ru electrode. The leakage current was dominated by Schottky emission in the low electric field (<∼0.3 MV/cm), and the barrier height of the STO/Ru interface was ∼0.47 eV. Fowler-Nordheim tunneling appeared to be the primary conduction mechanism in the high electric field (>0.3 MV/cm) region. The estimated effective mass of the tunneling electron was ∼0.1 m0.

UR - http://www.scopus.com/inward/record.url?scp=70249141213&partnerID=8YFLogxK

U2 - 10.1149/1.3212897

DO - 10.1149/1.3212897

M3 - Article

AN - SCOPUS:70249141213

SN - 1099-0062

VL - 12

SP - G69-G71

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 11

ER -

Electronic conduction mechanism of SrTiO₃ thin film grown on ru electrode by atomic layer deposition

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