Engineering nonlinearity into memristors for passive crossbar applications

J. Joshua Yang; M. X. Zhang; Matthew D. Pickett; Feng Miao; John Paul Strachan; Wen Di Li; Wei Yi; Douglas A.A. Ohlberg; Byung Joon Choi; Wei Wu; Janice H. Nickel; Gilberto Medeiros-Ribeiro; R. Stanley Williams

doi:10.1063/1.3693392

Engineering nonlinearity into memristors for passive crossbar applications

J. Joshua Yang
, M. X. Zhang
, Matthew D. Pickett
, Feng Miao
, John Paul Strachan
, Wen Di Li
, Wei Yi
, Douglas A.A. Ohlberg
, Byung Joon Choi
, Wei Wu
, Janice H. Nickel
, Gilberto Medeiros-Ribeiro
, R. Stanley Williams

Dept. of Materials Science & Engineering

Hewlett-Packard

Research output: Contribution to journal › Article › peer-review

194 Scopus citations

Abstract

Although TaO _x memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO _2-x/TaO _x oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device.

Original language	English
Article number	113501
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3693392
State	Published - 12 Mar 2012

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title = "Engineering nonlinearity into memristors for passive crossbar applications",

abstract = "Although TaO x memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO 2-x/TaO x oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device.",

author = "\{Joshua Yang\}, J. and Zhang, \{M. X.\} and Pickett, \{Matthew D.\} and Feng Miao and \{Paul Strachan\}, John and Li, \{Wen Di\} and Wei Yi and Ohlberg, \{Douglas A.A.\} and \{Joon Choi\}, Byung and Wei Wu and Nickel, \{Janice H.\} and Gilberto Medeiros-Ribeiro and \{Stanley Williams\}, R.",

year = "2012",

month = mar,

day = "12",

doi = "10.1063/1.3693392",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

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T1 - Engineering nonlinearity into memristors for passive crossbar applications

AU - Joshua Yang, J.

AU - Zhang, M. X.

AU - Pickett, Matthew D.

AU - Miao, Feng

AU - Paul Strachan, John

AU - Li, Wen Di

AU - Yi, Wei

AU - Ohlberg, Douglas A.A.

AU - Joon Choi, Byung

AU - Wu, Wei

AU - Nickel, Janice H.

AU - Medeiros-Ribeiro, Gilberto

AU - Stanley Williams, R.

PY - 2012/3/12

Y1 - 2012/3/12

N2 - Although TaO x memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO 2-x/TaO x oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device.

AB - Although TaO x memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO 2-x/TaO x oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device.

UR - https://www.scopus.com/pages/publications/84859984075

U2 - 10.1063/1.3693392

DO - 10.1063/1.3693392

M3 - Article

AN - SCOPUS:84859984075

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 113501

ER -

Engineering nonlinearity into memristors for passive crossbar applications

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