@inproceedings{ef59b726c3744f7b8818f352fa883415,
title = "Engineering nvCap From FEOL to BEOL with Ferroelectric Small-signal Non-destructive Read",
abstract = "Non-volatile ferroelectric capacitor (nvCap) that leverages the small-signal non-destructive read is a new concept to the ferroelectric memory family. nvCap overcomes the endurance limitation imposed by the destructive read in conventional ferroelectric random access memory (FeRAM) that relies on large-signal polarization switching. nvCap is also a promising candidate to enable the charge domain computation in a capacitive crossbar array for in-memory computing that only consumes dynamic power. The key engineering goal of nvCap is to optimize a asymmetric C-V characteristics to open up the large capacitance on/off ratio at DC zero voltage. In this invited paper, we present the progresses of our work on optimizing the nvCap device. We first introduce the HZO-based MFM nvCap that demonstrates the proof-of-concept, and present the FeFET-based MFS nvCap that improves capacitance on/off ratio with reliability/scaling analysis. Finally we report our new results on BEOL-compatible MFS nvCap based on a oxide semiconductor layer.",
keywords = "Back-end-of-line compatibility, Ferroelectrics, In-memory computing, Non-volatile memory",
author = "Kim, \{Tae Hyeon\} and Luo, \{Yuan Chun\} and Omkar Phadke and James Read and Shimeng Yu",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 16th IEEE International Memory Workshop, IMW 2024 ; Conference date: 12-05-2024 Through 15-05-2024",
year = "2024",
doi = "10.1109/IMW59701.2024.10536973",
language = "English",
series = "2024 IEEE International Memory Workshop, IMW 2024 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE International Memory Workshop, IMW 2024 - Proceedings",
}