Enhanced Anion Interaction by Polarity Control on CNTVT:SVS Copolymers for Improving Nonvolatile Characteristics in Neuromorphic Computing

Synaptic devices that simulate biological functions are of interest in neuromorphic computing, because of their low power consumption characteristics. However, achieving long-term plasticity (LTP) in electrolyte-gated transistors (EGTs) is challenging, because the electric double layer (EDL) of the electrolyte/channel disappears when the gate electrode voltage is removed. In this study, we fabricated a CNTVT-based EGTs by adjusting the polarity of the backbone. This process involves improving the polarity of the backbone by adjusting the DPP-CNTVT ratio. Furthermore, it facilitates increased binding of TFSI anions in DEME-TFSI at the electrolyte/channel interface. The CNTVT-based EGTs successfully achieved LTP and exhibited essential synaptic properties, including paired-pulse facilitation (PPF) and a high-pass filter. Furthermore, the results of driving MNIST handwritten digits based on long-term potentiation/depression (LTP/LTD) with controlled backbone polarity improved from 50.18% to 93.28%. These findings offer a simple architectural design for synaptic devices that leverage state-of-the-art neural modeling techniques.