Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction

Chang Zoo Kim; Hogyoung Kim; Keun Man Song; Dong Hwan Jun; Ho Kwan Kang; Wonkyu Park; Chul Gi Ko

doi:10.1016/j.mee.2009.09.014

Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction

Chang Zoo Kim, Hogyoung Kim, Keun Man Song, Dong Hwan Jun, Ho Kwan Kang, Wonkyu Park, Chul Gi Ko

Dept. of Optometry

Korea Advanced Nano Fab Center

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Carbon doping of GaAs using CBr₄ (carbon tetrabromide) in metal-organic chemical vapor deposition (MOCVD) was investigated to obtain very high and sharp doping profiles required for tunnel junction in tandem solar cells. It was found that the hole concentration increased with decreasing growth temperature and V/III ratio. Hole doping profiles versus distance from the sample surface showed that the hole concentration near the surface was very low in comparison with that far below the surface. As a post-growth treatment, CBr₄ was supplied during the cool down process and produced almost constant hole concentration of 1 × 10²⁰ cm^-3 regardless of the depth, when CBr₄ flow rate was 9.53 μmol/min. Based on these results, solar cells were fabricated using both carbon (C) and zinc (Zn) as a p-type dopant. It was shown that C doping exhibits higher efficiency and lower series resistance than those of Zn doping in GaInP/GaAs tandem solar cells.

Original language	English
Pages (from-to)	677-681
Number of pages	5
Journal	Microelectronic Engineering
Volume	87
Issue number	4
DOIs	https://doi.org/10.1016/j.mee.2009.09.014
State	Published - Apr 2010

Keywords

Carbon doping
GaAs
MOCVD
Tandem solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.mee.2009.09.014

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title = "Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction",

abstract = "Carbon doping of GaAs using CBr4 (carbon tetrabromide) in metal-organic chemical vapor deposition (MOCVD) was investigated to obtain very high and sharp doping profiles required for tunnel junction in tandem solar cells. It was found that the hole concentration increased with decreasing growth temperature and V/III ratio. Hole doping profiles versus distance from the sample surface showed that the hole concentration near the surface was very low in comparison with that far below the surface. As a post-growth treatment, CBr4 was supplied during the cool down process and produced almost constant hole concentration of 1 × 1020 cm-3 regardless of the depth, when CBr4 flow rate was 9.53 μmol/min. Based on these results, solar cells were fabricated using both carbon (C) and zinc (Zn) as a p-type dopant. It was shown that C doping exhibits higher efficiency and lower series resistance than those of Zn doping in GaInP/GaAs tandem solar cells.",

keywords = "Carbon doping, GaAs, MOCVD, Tandem solar cells",

author = "Kim, \{Chang Zoo\} and Hogyoung Kim and Song, \{Keun Man\} and Jun, \{Dong Hwan\} and Kang, \{Ho Kwan\} and Wonkyu Park and Ko, \{Chul Gi\}",

year = "2010",

month = apr,

doi = "10.1016/j.mee.2009.09.014",

language = "English",

volume = "87",

pages = "677--681",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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TY - JOUR

T1 - Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction

AU - Kim, Chang Zoo

AU - Kim, Hogyoung

AU - Song, Keun Man

AU - Jun, Dong Hwan

AU - Kang, Ho Kwan

AU - Park, Wonkyu

AU - Ko, Chul Gi

PY - 2010/4

Y1 - 2010/4

N2 - Carbon doping of GaAs using CBr4 (carbon tetrabromide) in metal-organic chemical vapor deposition (MOCVD) was investigated to obtain very high and sharp doping profiles required for tunnel junction in tandem solar cells. It was found that the hole concentration increased with decreasing growth temperature and V/III ratio. Hole doping profiles versus distance from the sample surface showed that the hole concentration near the surface was very low in comparison with that far below the surface. As a post-growth treatment, CBr4 was supplied during the cool down process and produced almost constant hole concentration of 1 × 1020 cm-3 regardless of the depth, when CBr4 flow rate was 9.53 μmol/min. Based on these results, solar cells were fabricated using both carbon (C) and zinc (Zn) as a p-type dopant. It was shown that C doping exhibits higher efficiency and lower series resistance than those of Zn doping in GaInP/GaAs tandem solar cells.

AB - Carbon doping of GaAs using CBr4 (carbon tetrabromide) in metal-organic chemical vapor deposition (MOCVD) was investigated to obtain very high and sharp doping profiles required for tunnel junction in tandem solar cells. It was found that the hole concentration increased with decreasing growth temperature and V/III ratio. Hole doping profiles versus distance from the sample surface showed that the hole concentration near the surface was very low in comparison with that far below the surface. As a post-growth treatment, CBr4 was supplied during the cool down process and produced almost constant hole concentration of 1 × 1020 cm-3 regardless of the depth, when CBr4 flow rate was 9.53 μmol/min. Based on these results, solar cells were fabricated using both carbon (C) and zinc (Zn) as a p-type dopant. It was shown that C doping exhibits higher efficiency and lower series resistance than those of Zn doping in GaInP/GaAs tandem solar cells.

KW - Carbon doping

KW - GaAs

KW - MOCVD

KW - Tandem solar cells

UR - https://www.scopus.com/pages/publications/75149165119

U2 - 10.1016/j.mee.2009.09.014

DO - 10.1016/j.mee.2009.09.014

M3 - Article

AN - SCOPUS:75149165119

SN - 0167-9317

VL - 87

SP - 677

EP - 681

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4

ER -

Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction

Abstract

Keywords

UN SDGs

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