Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

Sang Woon Lee; Oh Seong Kwon; Jeong Hwan Han; Cheol Seong Hwang

doi:10.1063/1.2939102

Enhanced electrical properties of SrTiO₃ thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

Sang Woon Lee, Oh Seong Kwon, Jeong Hwan Han, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

123 Scopus citations

Abstract

SrTiO₃ (STO) thin films were deposited at 370 °C by atomic layer deposition using H₂O as the oxidant, and Ti (O-iPr)2 (thd)2 and Sr (thd)2 as Ti, and Sr precursors, respectively. Denser STO films were produced at this deposition temperature. The saturated growth rate was 0.15 Åcycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A t_ox of 0.72 nm (dielectric constant of 108) and a low leakage current density (∼ 10^-7 A cm² at 0.8 V) were obtained from a planar capacitor structure consisting of Pt20-nm -thick STO/Ru (bottom).

Original language	English
Article number	222903
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2939102
State	Published - 2008

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title = "Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications",

abstract = "SrTiO3 (STO) thin films were deposited at 370 °C by atomic layer deposition using H2O as the oxidant, and Ti (O-iPr)2 (thd)2 and Sr (thd)2 as Ti, and Sr precursors, respectively. Denser STO films were produced at this deposition temperature. The saturated growth rate was 0.15 {\AA}cycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A tox of 0.72 nm (dielectric constant of 108) and a low leakage current density (∼ 10-7 A cm2 at 0.8 V) were obtained from a planar capacitor structure consisting of Pt20-nm -thick STO/Ru (bottom).",

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T1 - Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

AU - Lee, Sang Woon

AU - Kwon, Oh Seong

AU - Han, Jeong Hwan

AU - Hwang, Cheol Seong

PY - 2008

Y1 - 2008

N2 - SrTiO3 (STO) thin films were deposited at 370 °C by atomic layer deposition using H2O as the oxidant, and Ti (O-iPr)2 (thd)2 and Sr (thd)2 as Ti, and Sr precursors, respectively. Denser STO films were produced at this deposition temperature. The saturated growth rate was 0.15 Åcycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A tox of 0.72 nm (dielectric constant of 108) and a low leakage current density (∼ 10-7 A cm2 at 0.8 V) were obtained from a planar capacitor structure consisting of Pt20-nm -thick STO/Ru (bottom).

AB - SrTiO3 (STO) thin films were deposited at 370 °C by atomic layer deposition using H2O as the oxidant, and Ti (O-iPr)2 (thd)2 and Sr (thd)2 as Ti, and Sr precursors, respectively. Denser STO films were produced at this deposition temperature. The saturated growth rate was 0.15 Åcycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A tox of 0.72 nm (dielectric constant of 108) and a low leakage current density (∼ 10-7 A cm2 at 0.8 V) were obtained from a planar capacitor structure consisting of Pt20-nm -thick STO/Ru (bottom).

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Enhanced electrical properties of SrTiO₃ thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

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