Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

Sang Woon Lee; Oh Seong Kwon; Jeong Hwan Han; Cheol Seong Hwang

doi:10.1063/1.2939102

Enhanced electrical properties of SrTiO₃ thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

Sang Woon Lee
, Oh Seong Kwon
, Jeong Hwan Han
, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Seoul National University
Samsung

Research output: Contribution to journal › Article › peer-review

127 Scopus citations

Abstract

SrTiO₃ (STO) thin films were deposited at 370 °C by atomic layer deposition using H₂O as the oxidant, and Ti (O-iPr)2 (thd)2 and Sr (thd)2 as Ti, and Sr precursors, respectively. Denser STO films were produced at this deposition temperature. The saturated growth rate was 0.15 Åcycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A t_ox of 0.72 nm (dielectric constant of 108) and a low leakage current density (∼ 10^-7 A cm² at 0.8 V) were obtained from a planar capacitor structure consisting of Pt20-nm -thick STO/Ru (bottom).

Original language	English
Article number	222903
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2939102
State	Published - 2008

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title = "Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications",

abstract = "SrTiO3 (STO) thin films were deposited at 370 °C by atomic layer deposition using H2O as the oxidant, and Ti (O-iPr)2 (thd)2 and Sr (thd)2 as Ti, and Sr precursors, respectively. Denser STO films were produced at this deposition temperature. The saturated growth rate was 0.15 {\AA}cycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A tox of 0.72 nm (dielectric constant of 108) and a low leakage current density (∼ 10-7 A cm2 at 0.8 V) were obtained from a planar capacitor structure consisting of Pt20-nm -thick STO/Ru (bottom).",

author = "Lee, \{Sang Woon\} and Kwon, \{Oh Seong\} and Han, \{Jeong Hwan\} and Hwang, \{Cheol Seong\}",

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volume = "92",

journal = "Applied Physics Letters",

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T1 - Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

AU - Lee, Sang Woon

AU - Kwon, Oh Seong

AU - Han, Jeong Hwan

AU - Hwang, Cheol Seong

PY - 2008

Y1 - 2008

N2 - SrTiO3 (STO) thin films were deposited at 370 °C by atomic layer deposition using H2O as the oxidant, and Ti (O-iPr)2 (thd)2 and Sr (thd)2 as Ti, and Sr precursors, respectively. Denser STO films were produced at this deposition temperature. The saturated growth rate was 0.15 Åcycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A tox of 0.72 nm (dielectric constant of 108) and a low leakage current density (∼ 10-7 A cm2 at 0.8 V) were obtained from a planar capacitor structure consisting of Pt20-nm -thick STO/Ru (bottom).

AB - SrTiO3 (STO) thin films were deposited at 370 °C by atomic layer deposition using H2O as the oxidant, and Ti (O-iPr)2 (thd)2 and Sr (thd)2 as Ti, and Sr precursors, respectively. Denser STO films were produced at this deposition temperature. The saturated growth rate was 0.15 Åcycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A tox of 0.72 nm (dielectric constant of 108) and a low leakage current density (∼ 10-7 A cm2 at 0.8 V) were obtained from a planar capacitor structure consisting of Pt20-nm -thick STO/Ru (bottom).

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DO - 10.1063/1.2939102

M3 - Article

AN - SCOPUS:44849144583

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222903

ER -

Enhanced electrical properties of SrTiO₃ thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

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