Enhanced emission efficiency of GaNInGaN multiple quantum well light-emitting diode with an embedded photonic crystal

Min Ki Kwon; Ja Yeon Kim; Il Kyu Park; Ki Seok Kim; Gun Young Jung; Seong Ju Park; Je Won Kim; Yong Chun Kim

doi:10.1063/1.2948851

Enhanced emission efficiency of GaNInGaN multiple quantum well light-emitting diode with an embedded photonic crystal

Min Ki Kwon, Ja Yeon Kim, Il Kyu Park, Ki Seok Kim, Gun Young Jung, Seong Ju Park, Je Won Kim, Yong Chun Kim

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

A photonic crystal (PC) structure of periodic SiO₂ pillar cubic array is embedded in n-GaN layer of InGaNGaN multiple quantum well (MQW) blue (480 nm) light-emitting diode (LED). The diameter, period, and depth of Si O2 pillar are 124±6, 230±10, and 130±10 nm, respectively. The increments of 70% for external quantum efficiency, 17% for internal quantum efficiency, and 45% for light extraction efficiency from photoluminescence measurement, and 33% for optical output power at 20 mA are observed for LEDs with an embedded PC layer. This improvement can be attributed to the increased extraction efficiency by PC effect as well as increased internal quantum efficiency due to the decrease of dislocation density in n-GaN layer because of an epitaxial lateral over-growth process.

Original language	English
Article number	251110
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2948851
State	Published - 2008

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@article{863751f80cc74ee7b672eb66277c9f95,

title = "Enhanced emission efficiency of GaNInGaN multiple quantum well light-emitting diode with an embedded photonic crystal",

abstract = "A photonic crystal (PC) structure of periodic SiO2 pillar cubic array is embedded in n-GaN layer of InGaNGaN multiple quantum well (MQW) blue (480 nm) light-emitting diode (LED). The diameter, period, and depth of Si O2 pillar are 124±6, 230±10, and 130±10 nm, respectively. The increments of 70\% for external quantum efficiency, 17\% for internal quantum efficiency, and 45\% for light extraction efficiency from photoluminescence measurement, and 33\% for optical output power at 20 mA are observed for LEDs with an embedded PC layer. This improvement can be attributed to the increased extraction efficiency by PC effect as well as increased internal quantum efficiency due to the decrease of dislocation density in n-GaN layer because of an epitaxial lateral over-growth process.",

author = "Kwon, \{Min Ki\} and Kim, \{Ja Yeon\} and Park, \{Il Kyu\} and Kim, \{Ki Seok\} and Jung, \{Gun Young\} and Park, \{Seong Ju\} and Kim, \{Je Won\} and Kim, \{Yong Chun\}",

year = "2008",

doi = "10.1063/1.2948851",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Enhanced emission efficiency of GaNInGaN multiple quantum well light-emitting diode with an embedded photonic crystal

AU - Kwon, Min Ki

AU - Kim, Ja Yeon

AU - Park, Il Kyu

AU - Kim, Ki Seok

AU - Jung, Gun Young

AU - Park, Seong Ju

AU - Kim, Je Won

AU - Kim, Yong Chun

PY - 2008

Y1 - 2008

N2 - A photonic crystal (PC) structure of periodic SiO2 pillar cubic array is embedded in n-GaN layer of InGaNGaN multiple quantum well (MQW) blue (480 nm) light-emitting diode (LED). The diameter, period, and depth of Si O2 pillar are 124±6, 230±10, and 130±10 nm, respectively. The increments of 70% for external quantum efficiency, 17% for internal quantum efficiency, and 45% for light extraction efficiency from photoluminescence measurement, and 33% for optical output power at 20 mA are observed for LEDs with an embedded PC layer. This improvement can be attributed to the increased extraction efficiency by PC effect as well as increased internal quantum efficiency due to the decrease of dislocation density in n-GaN layer because of an epitaxial lateral over-growth process.

AB - A photonic crystal (PC) structure of periodic SiO2 pillar cubic array is embedded in n-GaN layer of InGaNGaN multiple quantum well (MQW) blue (480 nm) light-emitting diode (LED). The diameter, period, and depth of Si O2 pillar are 124±6, 230±10, and 130±10 nm, respectively. The increments of 70% for external quantum efficiency, 17% for internal quantum efficiency, and 45% for light extraction efficiency from photoluminescence measurement, and 33% for optical output power at 20 mA are observed for LEDs with an embedded PC layer. This improvement can be attributed to the increased extraction efficiency by PC effect as well as increased internal quantum efficiency due to the decrease of dislocation density in n-GaN layer because of an epitaxial lateral over-growth process.

UR - https://www.scopus.com/pages/publications/46049097772

U2 - 10.1063/1.2948851

DO - 10.1063/1.2948851

M3 - Article

AN - SCOPUS:46049097772

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 251110

ER -

Enhanced emission efficiency of GaNInGaN multiple quantum well light-emitting diode with an embedded photonic crystal

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