Enhanced strain of InAs quantum dots by an InGaAs ternary layer in a GaAs matrix

The present work demonstrates via numerical analysis that the presence of a thin InGaAs ternary layer around InAs quantum dots (QDs) reinforces the in-plane (εrr) and vertical (εzz) strain components of InAs quantum dots as compared to the QDs embedded directly in GaAs matrix, contrary to the general belief of strain relief. It has been further shown that such reinforced εrr and εzz states yields a decreased band-gap energy, i.e., the experimentally observed redshift in the literature.