Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory

Su Ryun Min; Han Na Cho; Kee Won Kim; Young Jin Cho; Sung Hoon Choa; Chee Won Chung

doi:10.1016/j.tsf.2007.08.020

Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory

Su Ryun Min, Han Na Cho, Kee Won Kim, Young Jin Cho, Sung Hoon Choa, Chee Won Chung

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Etch characteristics of magnetic tunnel junction (MTJ) stack masked with TiN films were investigated using an inductively coupled plasma reactive ion etcher in Cl₂/Ar and BCl₃/Ar gases for magnetic random access memory. The effect of etch gas on the etch profile of MTJ stacks was examined. As Cl₂ and BCl₃ concentrations increased, the etch slope of etched MTJ stack became slanted and the dimensional shrinkage was observed. A high degree of anisotropic etching of MTJ stacks was achieved using Cl₂/Ar gas at the optimized etch conditions.

Original language	English
Pages (from-to)	3507-3511
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2007.08.020
State	Published - 1 Apr 2008

Keywords

BCl/Ar
Cl/Ar
Inductively coupled plasma reactive ion etching
Magnetic random access memory
MTJ stack

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10.1016/j.tsf.2007.08.020

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title = "Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory",

abstract = "Etch characteristics of magnetic tunnel junction (MTJ) stack masked with TiN films were investigated using an inductively coupled plasma reactive ion etcher in Cl2/Ar and BCl3/Ar gases for magnetic random access memory. The effect of etch gas on the etch profile of MTJ stacks was examined. As Cl2 and BCl3 concentrations increased, the etch slope of etched MTJ stack became slanted and the dimensional shrinkage was observed. A high degree of anisotropic etching of MTJ stacks was achieved using Cl2/Ar gas at the optimized etch conditions.",

keywords = "BCl/Ar, Cl/Ar, Inductively coupled plasma reactive ion etching, Magnetic random access memory, MTJ stack",

author = "Min, \{Su Ryun\} and Cho, \{Han Na\} and Kim, \{Kee Won\} and Cho, \{Young Jin\} and Choa, \{Sung Hoon\} and Chung, \{Chee Won\}",

year = "2008",

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doi = "10.1016/j.tsf.2007.08.020",

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T1 - Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory

AU - Min, Su Ryun

AU - Cho, Han Na

AU - Kim, Kee Won

AU - Cho, Young Jin

AU - Choa, Sung Hoon

AU - Chung, Chee Won

PY - 2008/4/1

Y1 - 2008/4/1

N2 - Etch characteristics of magnetic tunnel junction (MTJ) stack masked with TiN films were investigated using an inductively coupled plasma reactive ion etcher in Cl2/Ar and BCl3/Ar gases for magnetic random access memory. The effect of etch gas on the etch profile of MTJ stacks was examined. As Cl2 and BCl3 concentrations increased, the etch slope of etched MTJ stack became slanted and the dimensional shrinkage was observed. A high degree of anisotropic etching of MTJ stacks was achieved using Cl2/Ar gas at the optimized etch conditions.

AB - Etch characteristics of magnetic tunnel junction (MTJ) stack masked with TiN films were investigated using an inductively coupled plasma reactive ion etcher in Cl2/Ar and BCl3/Ar gases for magnetic random access memory. The effect of etch gas on the etch profile of MTJ stacks was examined. As Cl2 and BCl3 concentrations increased, the etch slope of etched MTJ stack became slanted and the dimensional shrinkage was observed. A high degree of anisotropic etching of MTJ stacks was achieved using Cl2/Ar gas at the optimized etch conditions.

KW - BCl/Ar

KW - Cl/Ar

KW - Inductively coupled plasma reactive ion etching

KW - Magnetic random access memory

KW - MTJ stack

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U2 - 10.1016/j.tsf.2007.08.020

DO - 10.1016/j.tsf.2007.08.020

M3 - Article

AN - SCOPUS:40649125039

SN - 0040-6090

VL - 516

SP - 3507

EP - 3511

JO - Thin Solid Films

JF - Thin Solid Films

IS - 11

ER -

Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memory

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Keywords

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