TY - JOUR
T1 - Evaluation of thin dielectric-glue wafer-bonding for three dimensional integrated circuit-applications
AU - Kwon, Y.
AU - Yu, J.
AU - McMahon, J. J.
AU - Lu, J. Q.
AU - Cale, T. S.
AU - Gutmann, R. J.
PY - 2004
Y1 - 2004
N2 - The critical adhesion energy of benzocyclobutene (BCB)-bonded wafers is quantitatively investigated with focus on BCB thickness, material stack and thermal cycling. The critical adhesion energy depends linearly on BCB thickness, increasing from 19 J/m2 to 31 J/m2 as the BCB thickness increases from 0.4 μm to 2.6 μm, when bonding silicon wafers coated with plasma enhanced chemical vapor deposited (PECVD) silicon dioxide (SiO 2). In thermal cycling performed with 350 and 400 °C peak temperatures, the significant increase in critical adhesion energy at the interface between BCB and PECVD SiO2 during the first thermal cycle is attributed to relaxation of residual stress in the PECVD SiO2 layer. On the other hand, the critical adhesion energy at the interface between BCB and PECVD silicon nitride (SiNx) decreases due to the increase of residual stress in the PECVD SiNx layer during the first thermal cycle.
AB - The critical adhesion energy of benzocyclobutene (BCB)-bonded wafers is quantitatively investigated with focus on BCB thickness, material stack and thermal cycling. The critical adhesion energy depends linearly on BCB thickness, increasing from 19 J/m2 to 31 J/m2 as the BCB thickness increases from 0.4 μm to 2.6 μm, when bonding silicon wafers coated with plasma enhanced chemical vapor deposited (PECVD) silicon dioxide (SiO 2). In thermal cycling performed with 350 and 400 °C peak temperatures, the significant increase in critical adhesion energy at the interface between BCB and PECVD SiO2 during the first thermal cycle is attributed to relaxation of residual stress in the PECVD SiO2 layer. On the other hand, the critical adhesion energy at the interface between BCB and PECVD silicon nitride (SiNx) decreases due to the increase of residual stress in the PECVD SiNx layer during the first thermal cycle.
UR - http://www.scopus.com/inward/record.url?scp=12844250613&partnerID=8YFLogxK
U2 - 10.1557/proc-812-f6.16
DO - 10.1557/proc-812-f6.16
M3 - Conference article
AN - SCOPUS:12844250613
SN - 0272-9172
VL - 812
SP - 321
EP - 326
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004
Y2 - 13 April 2004 through 15 April 2004
ER -