Experimental studies of through-wafer copper interconnect in wafer level MEMS packaging

Sung Hoon Choa

doi:10.4028/0-87849-413-8.231

Experimental studies of through-wafer copper interconnect in wafer level MEMS packaging

Sung Hoon Choa

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, mechanical reliability issues of copper through-wafer interconnection are investigated numerically and experimentally. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, copper diffusion phenomenon, and cleaning process. Improvement methods are also suggested.

Original language	English
Pages (from-to)	231-234
Number of pages	4
Journal	Key Engineering Materials
Volume	324-325 I
DOIs	https://doi.org/10.4028/0-87849-413-8.231
State	Published - 2006

Keywords

Copper interconnection
Reliability
Through-wafer via
Wafer level packaging

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10.4028/0-87849-413-8.231

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title = "Experimental studies of through-wafer copper interconnect in wafer level MEMS packaging",

abstract = "In this paper, mechanical reliability issues of copper through-wafer interconnection are investigated numerically and experimentally. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, copper diffusion phenomenon, and cleaning process. Improvement methods are also suggested.",

keywords = "Copper interconnection, Reliability, Through-wafer via, Wafer level packaging",

author = "Choa, \{Sung Hoon\}",

year = "2006",

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AB - In this paper, mechanical reliability issues of copper through-wafer interconnection are investigated numerically and experimentally. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, copper diffusion phenomenon, and cleaning process. Improvement methods are also suggested.

KW - Copper interconnection

KW - Reliability

KW - Through-wafer via

KW - Wafer level packaging

UR - https://www.scopus.com/pages/publications/33750905710

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DO - 10.4028/0-87849-413-8.231

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SN - 1013-9826

VL - 324-325 I

SP - 231

EP - 234

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Experimental studies of through-wafer copper interconnect in wafer level MEMS packaging

Abstract

Keywords

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