TY - GEN
T1 - Fab-free, high throughput thin metal film fabrication method using reductive metal ion ink coating for diverse plasmonic and electronic applications
AU - Lee, Jae Hyuk
AU - Kim, Jeong Dae
AU - Yoo, Kangeun
AU - Seoklee, Won
AU - Kim, Min Cheol
AU - Kang, Daehun
AU - Han, Ju Hyoung
AU - Hur, Jong Won
AU - Park, Donghyun
AU - Chun, Hyun Soo
AU - Youn, Hongseok
AU - Ok, Jong G.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2019/1/8
Y1 - 2019/1/8
N2 - Metal thin films can be applied to a wide variety of applications due to their excellent thermal and electrical conduction, as well as unique electrical and optical properties. Conventional thin metal film fabrication methods such as sputtering and vacuum evaporation have limitations especially for scalable and high-throughput production due to area constraint, low speed, and high cost. In this study, we propose a simple metal thin film forming method based on facile coating of reductive metallic (Ag) ion-containing ink followed by quick annealing. This method has a simple and strong controllability for the film thickness and surface morphology by controlling ink concentration, coating speed, and annealing condition. In addition, incorporating nanostructures by lithography, nanoimprinting, etc., further makes it possible to apply Ag thin film to more wider applications involving sensors, plasmonics, photonics, and more. For one vivid example, we demonstrate that it is possible to embed nanopatterns using nanoimprinting in the Ag thin film and zinc oxide nanowires can be selectively grown.
AB - Metal thin films can be applied to a wide variety of applications due to their excellent thermal and electrical conduction, as well as unique electrical and optical properties. Conventional thin metal film fabrication methods such as sputtering and vacuum evaporation have limitations especially for scalable and high-throughput production due to area constraint, low speed, and high cost. In this study, we propose a simple metal thin film forming method based on facile coating of reductive metallic (Ag) ion-containing ink followed by quick annealing. This method has a simple and strong controllability for the film thickness and surface morphology by controlling ink concentration, coating speed, and annealing condition. In addition, incorporating nanostructures by lithography, nanoimprinting, etc., further makes it possible to apply Ag thin film to more wider applications involving sensors, plasmonics, photonics, and more. For one vivid example, we demonstrate that it is possible to embed nanopatterns using nanoimprinting in the Ag thin film and zinc oxide nanowires can be selectively grown.
KW - flexible device
KW - nanoimprint
KW - reductive metal ink
UR - http://www.scopus.com/inward/record.url?scp=85061797070&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2018.8605735
DO - 10.1109/NMDC.2018.8605735
M3 - Conference contribution
AN - SCOPUS:85061797070
T3 - 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018
BT - 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018
Y2 - 14 October 2018 through 17 October 2018
ER -